IXTP60N10TM IXYS, IXTP60N10TM Datasheet - Page 2

• Manufacturer Part Number: IXTP60N10TM
• Description: Trench MOSFETs
• Manufacturer: IXYS

Specifications of IXTP60N10TM

• Vdss, Max, (v): 100
• Id(cont), Tc=25°c, (a): 33
• Rds(on), Max, Tj=25°c, (?): 0.019
• Ciss, Typ, (pf): 2650
• Qg, Typ, (nc): 49
• Trr, Typ, (ns): 59
• Trr, Max, (ns): -
• Pd, (w): 60
• Rthjc, Max, (k/w): 2.5
• Package Style: OVERMOLEDED

Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
Source-Drain Diode
Symbol
T
I
I
V
t
I
Q
Notes
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents: 4,850,072
d(on)
r
d(off)
f
S
SM
rr
RM
fs
J
iss
oss
rss
thJC
SD
g(on)
gs
gd
RM
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
J
= 25°C unless otherwise specified)
= 25°C unless otherwise specified)
2. On through-hole packages, R
1.
5mm or less from the package body.
Pulse test, t ≤ 300 μs; duty cycle, d ≤ 2%.
Test Conditions
V
V
Resistive Switching Times
V
R
V
Test Conditions
V
Repetitive, pulse width limited by T
I
I
-di/dt = 100A/μs
V
F
F
DS
GS
GS
GS
GS
R
G
= 25A, V
= 30A, V
= 50V
PRELIMINARY TECHNICAL INFORMATION
= 10V, I
= 10V, V
= 0V, V
= 10V, V
= 15Ω (External)
= 0V
GS
GS
D
DS
DS
= 0.5 • I
DS
= 0V
= 0V, Note 1
= 25V, f = 1MHz
= 0.5 • V
= 0.5 • V
4,835,592
4,881,106
D25
, Note 1
DSS
DSS
4,931,844
5,017,508
5,034,796
, I
, I
DS(on)
D
D
= 10A
= 10A
Kelvin test contact location must be
5,049,961
5,063,307
5,187,117
JM
5,237,481
5,381,025
5,486,715
Min.
Characteristic Values
Min.
Characteristic Values
25
6,162,665
6,259,123 B1
6,306,728 B1
2650
Typ.
Typ.
335
112
3.8
60
27
40
43
37
49
15
11
59
42
240
1.2
2.5 °C/W
60
6,404,065 B1
6,534,343
6,583,505
Max.
Max.
nC
nC
nC
pF
pF
pF
nC
ns
ns
ns
ns
ns
S
A
A
V
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
OVERMOLDED TO-220 W/ FORMED
LEAD (IXTP...M)
6,727,585
6,771,478 B2 7,071,537
1 2 3
IXTP60N10TM
7,005,734 B2
7,063,975 B2
Terminals: 1 - Gate
2 - Collector
3 - Emitter
7,157,338B2