MMIX1F520N075T2 IXYS, MMIX1F520N075T2 Datasheet - Page 4

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MMIX1F520N075T2

Manufacturer Part Number
MMIX1F520N075T2
Description
TrenchT2 HiperFETs
Manufacturer
IXYS
Datasheet

Specifications of MMIX1F520N075T2

Vdss, Max, (v)
75
Id(cont), Tc=25°c, (a)
500
Rds(on), Max, Tj=25°c, (?)
0.0016
Ciss, Typ, (pf)
41000
Qg, Typ, (nc)
545
Trr, Typ, (ns)
-
Trr, Max, (ns)
150
Pd, (w)
830
Rthjc, Max, (k/w)
0.18
Package Style
SMPD
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
300
250
200
150
100
100
50
10
10
0
9
8
7
6
5
4
3
2
1
0
1
0
0
1
R
V
I
I
T
T
Single Pulse
D
G
DS(on)
DS
J
C
= 260A
= 10mA
= 175ºC
= 25ºC
= 37.5V
Fig. 11. Forward-Bias Safe Operating Area
100
Limit
50
Fig. 7. Transconductance
200
Fig. 9. Gate Charge
Q
100
G
I
- NanoCoulombs
D
V
- Amperes
DS
300
10
- Volts
T
150
J
= - 40ºC
400
25ºC
150ºC
200
500
DC
25µs
100µs
1ms
10ms
100ms
250
600
100
0.0001
0.001
0.01
100
350
300
250
200
150
100
0.1
0.1
10
50
0.00001
1
0
1
0.3
0
f
= 1 MHz
Fig. 12. Maximum Transient Thermal Impedance
Fig. 8. Forward Voltage Drop of Intrinsic Diode
5
0.4
0.0001
10
0.5
MMIX1F520N075T2
0.001
Fig. 10. Capacitance
T
Pulse Width - Seconds
15
J
= 150ºC
0.6
V
V
SD
DS
0.01
- Volts
20
- Volts
0.7
25
C iss
C oss
C rss
0.1
0.8
30
T
J
= 25ºC
1
0.9
35
1.0
40
10

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