IXTC110N055T IXYS, IXTC110N055T Datasheet - Page 4

• Manufacturer Part Number: IXTC110N055T
• Description: Trench MOSFETs
• Manufacturer: IXYS

Specifications of IXTC110N055T

• Vdss, Max, (v): 55
• Id(cont), Tc=25°c, (a): 78
• Rds(on), Max, Tj=25°c, (?): 0.0090
• Ciss, Typ, (pf): 3080
• Qg, Typ, (nc): 67
• Trr, Typ, (ns): 70
• Trr, Max, (ns): -
• Pd, (w): 100
• Rthjc, Max, (k/w): 1.50
• Package Style: ISOPLUS220™

IXYS reserves the right to change limits, test conditions, and dimensions.
10,000
1,000
300
270
240
210
180
150
120
180
160
140
120
100
100
90
60
30
80
60
40
20
0
0
0.4
3
0
f = 1 MHz
3.5
0.6
5
Fig. 9. Forward Voltage Drop of
T
J
= 150ºC
10
4
0.8
Fig. 7. Input Admittance
Fig. 11. Capacitance
Intrinsic Diode
4.5
15
V
V
V
GS
SD
DS
1
T
J
- Volts
- Volts
- Volts
= 25ºC
20
5
C oss
C rss
C iss
1.2
5.5
25
T
J
= -40ºC
1.4
150ºC
25ºC
30
6
1.6
6.5
35
1.8
40
7
10.00
1.00
0.10
0.01
0.00001
90
80
70
60
50
40
30
20
10
10
0
9
8
7
6
5
4
3
2
1
0
0
0
V
I
I
D
G
DS
20
= 25A
= 10mA
Fig. 12. Maxim um Transient Therm al
0.0001
10
= 27.5V
T
J
= - 40ºC
40
Fig. 8. Transconductance
20
Q
0.001
Pulse W idth - Seconds
Fig. 10. Gate Charge
25ºC
G
60
- NanoCoulombs
I
D
150ºC
Im pedance
- Amperes
30
80
0.01
IXTC110N055T
100
40
120
0.1
50
140
1
60
160
180
10
70