IXTH420N04T2 IXYS, IXTH420N04T2 Datasheet - Page 4

• Manufacturer Part Number: IXTH420N04T2
• Description: TrenchT2 MOSFETs
• Manufacturer: IXYS

Specifications of IXTH420N04T2

• Vdss, Max, (v): 40
• Id(cont), Tc=25°c, (a): 420
• Rds(on), Max, Tj=25°c, (?): 0.002
• Ciss, Typ, (pf): 19700
• Qg, Typ, (nc): 315
• Trr, Typ, (ns): 74
• Pd, (w): 935
• Rthjc, Max, (k/w): 0.16
• Package Style: TO-247

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
1,000
200
180
160
140
120
100
100
350
300
250
200
150
100
80
60
40
20
50
0
0
1.5
0.3
0
f
= 1 MHz
0.4
5
2.0
0.5
Fig. 9. Forward Voltage Drop of
10
Fig. 7. Input Admittance
T
2.5
0.6
J
Fig. 11. Capacitance
T
= 150ºC
J
15
- 40ºC
= 150ºC
25ºC
Intrinsic Diode
V
GS
V
0.7
V
SD
DS
- Volts
3.0
- Volts
20
- Volts
C iss
C oss
C rss
0.8
25
3.5
T
0.9
J
= 25ºC
30
1.0
4.0
35
1.1
4.5
1.2
40
10,000
1,000
240
200
160
120
100
80
40
10
10
0
9
8
7
6
5
4
3
2
1
0
0
0
1
External Lead Current Limit
V
I
I
D
G
DS
20
= 210A
= 10mA
R
= 20V
40
DS(on)
Fig. 12. Forward-Bias Safe Operating Area
40
Limit
80
Fig. 8. Transconductance
60
Fig. 10. Gate Charge
120
Q
80
G
IXTH420N04T2
I
- NanoCoulombs
D
V
- Amperes
DS
100
160
10
- Volts
120
200
DC
140
240
IXYS REF: T_420N04T2(V8)7-15-09
160
T
J
T
T
Single Pulse
25µs
100µs
1ms
10ms
100ms
= - 40ºC
J
C
= 175ºC
280
= 25ºC
25ºC
150ºC
180
320
200
100