IXTA15N50L2 IXYS, IXTA15N50L2 Datasheet - Page 2

• Manufacturer Part Number: IXTA15N50L2
• Manufacturer: IXYS

Specifications of IXTA15N50L2

• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 15
• Rds(on), Max, Tj=25°c, (?): 0.480
• Ciss, Typ, (pf): 4080
• Qg, Typ, (nc): 123
• Trr, Typ, (ns): 570
• Pd, (w): 300
• Rthjc, Max, (k/w): 0.42
• Package Style: TO-263

Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Safe Operating Area Specification
Symbol
SOA
Source-Drain Diode
Symbol
(T
I
I
V
t
Note
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
S
SM
d(on)
r
d(off)
f
rr
fs
SD
iss
oss
rss
thJC
thCS
g(on)
gs
gd
J
J
= 25°C, Unless Otherwise Specified)
= 25°C, Unless Otherwise Specified)
1 = Gate
2 = Drain
3 = Source
4 = Drain
TO-263 Outline
1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
V
V
Resistive Switching Times
V
R
V
(TO-220)
(TO-247)
Test Conditions
V
V
Repetitive, pulse width limited by T
I
I
Test Conditions
Test Conditions
F
F
DS
GS
GS
GS
DS
GS
G
= 15A, V
= 15A, -di/dt = 100A/μs, V
= 10V, I
= 0V, V
= 10V, 0.5 • V
= 10Ω (External)
= 10V, V
= 400V, I
= 0V
GS
DS
D
DS
D
= 0V, Note 1
= 0.5 • I
= 25V, f = 1MHz
= 375mA, T
= 0.5 • V
4,835,592
4,881,106
DSS
, I
D25
D
, Note 1
DSS
= 0.5 • I
4,931,844
5,017,508
5,034,796
C
, I
= 75°C, t
R
D
= 100V, V
= 0.5 • I
D25
5,049,961
5,063,307
5,187,117
JM
p
D25
= 2s
GS
= 0V
5,237,481
5,381,025
5,486,715
Characteristic Values
Characteristic Values
Min.
150
Min.
4.5
Characteristic Values
Min.
6,162,665
6,259,123 B1
6,306,728 B1
4080
Typ.
0.50
0.25
Typ.
265
110
123
570
Typ.
6.3
68
38
73
65
20
72
0.42 °C/W
Max.
6,404,065 B1
6,534,343
6,583,505
Max.
8.0
Max.
1.5
15
60
°C/W
°C/W
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
IXTA15N50L2 IXTP15N50L2
W
S
A
A
V
6,683,344
6,710,405 B2 6,759,692
6,710,463
TO-247 Outline
TO-220 Outline
1 = Gate
2 = Drain
3 = Source
6,727,585
6,771,478 B2 7,071,537
Pins: 1 - Gate
3 - Source
7,005,734 B2
7,063,975 B2
IXTH15N50L2
2 - Drain
7,157,338B2