CPC3714 IXYS, CPC3714 Datasheet - Page 3

• Manufacturer Part Number: CPC3714
• Description: Depletion Mode MOSFETs
• Manufacturer: IXYS

Specifications of CPC3714

• Vds, Max, (v): 350(min)
• Id(on), Min, (a): 0.2
• Rds(on), Max, (?): 14
• Vgs(off), Max, (v): -3.9
• Ciss, Typ, (pf): 45
• Crss, Typ, (pf): -
• Qg, Typ, (nc): -
• Pd, (w): -
• Rthjc, Max, (ºc/w): 15
• Package Style: SOT-89

R00B
*The Performance data shown in the graphs above is typical of device performance. For guaranteed parameters not indicated in the written specifi cations, please
contact our application department.
0.0001
0.001
250
225
200
175
150
125
100
75
50
25
21
18
15
12
1.0
0.1
0
9
6
3
0
-50
0
0
Maximum Rated Safe Operating Area
1
V
Output Characteristics
GS
R
-0
(V
=0V
ON
10
GS
Temperature (ºC)
2
vs. Temperature
=0V, I
(T
at 25ºC
A
V
V
=25ºC)
DS
DS
50
3
D
(V)
=100mA)
(V)
100
4
100
V
V
V
GS
GS
GS
=-1.0V
=-1.5V
=-2.0V
5
150
1000
6
280
240
200
160
120
160
140
120
100
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
80
40
80
60
40
20
PERFORMANCE DATA*
0
0
0
-3.0
0
Capacitance vs. Drain Source Voltage
0
C
RSS
20
Transfer Characteristics
PRELIMINARY
Power Dissipation vs.
Ambient Temperature
-2.5
40
10
Temperature (ºC)
+125ºC
60
(V
(V
V
V
DS
GS
-2.0
GS
DS
20
=5V)
=-5V)
80
(V)
(V)
+25ºC
100
-1.5
30
120
-40ºC
C
C
ISS
OSS
-1.0
140
40
-2.0
-2.5
-3.0
-3.5
-4.0
-4.5
-5.0
-5.5
300
250
200
150
100
50
20
18
16
14
12
10
0
8
6
4
2
0
-50
0
0
Transconductance vs. Drain Current
On-Resistance vs. Drain Current
10
0.06
20 30 40
V
GS(OFF)
-0
(V
Temperature (ºC)
DS
+125ºC
+25ºC
-55ºC
0.12
=10V, I
vs. Temperature
(V
(V
I
DS
D
I
GS
D
50
50
(mA)
=10V)
(A)
=0V)
D
0.18
=1mA)
60 70 80
100
CPC3714
0.24
90
150
0.30
100
3