IXFX24N100Q3 IXYS, IXFX24N100Q3 Datasheet - Page 4

• Manufacturer Part Number: IXFX24N100Q3
• Description: Q3-Class HiPerFETs
• Manufacturer: IXYS

Specifications of IXFX24N100Q3

• Vdss, Max, (v): 1000
• Id(cont), Tc=25°c, (a): 24
• Rds(on), Max, Tj=25°c, (?): 0.44
• Ciss, Typ, (pf): 7200
• Qg, Typ, (nc): 140
• Trr, Typ, (ns): -
• Trr, Max, (ns): 300
• Pd, (w): 1000
• Rthjc, Max, (ºc/w): 0.125
• Package Style: PLUS247

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
1,000
100
50
45
40
35
30
25
20
15
10
80
70
60
50
40
30
20
10
10
5
0
0
0.3
4
0
f
= 1 MHz
4.5
0.4
Fig. 9. Forward Voltage Drop of Intrinsic Diode
5
0.5
5
10
5.5
0.6
Fig. 7. Input Admittance
Fig. 11. Capacitance
15
0.7
6
T
T
J
V
V
V
J
= 125ºC
SD
DS
GS
= 125ºC
6.5
0.8
- Volts
20
- Volts
- Volts
0.9
7
25
25ºC
C oss
C rss
C iss
7.5
T
1.0
J
= 25ºC
30
1.1
8
- 40ºC
35
8.5
1.2
1.3
40
9
100
0.1
16
14
12
10
10
60
50
40
30
20
10
8
6
4
2
0
0
1
10
0
0
T
T
Single Pulse
V
I
I
D
G
J
C
DS
R
= 150ºC
5
= 12A
= 10mA
DS(on)
= 25ºC
= 500V
Fig. 12. Forward-Bias Safe Operating Area
Limit
10
50
Fig. 8. Transconductance
15
Fig. 10. Gate Charge
Q
20
G
V
- NanoCoulombs
I
D
DS
- Amperes
100
- Volts
100
25
IXFK24N100Q3
IXFX24N100Q3
30
T
35
J
= - 40ºC
150
25ºC
125ºC
40
45
1,000
25µs
100µs
1ms
200
50