IXFH18N100Q3 IXYS, IXFH18N100Q3 Datasheet - Page 4

• Manufacturer Part Number: IXFH18N100Q3
• Description: Q3-Class HiPerFETs
• Manufacturer: IXYS

Specifications of IXFH18N100Q3

• Vdss, Max, (v): 1000
• Id(cont), Tc=25°c, (a): 18
• Rds(on), Max, Tj=25°c, (?): 0.66
• Ciss, Typ, (pf): 4890
• Qg, Typ, (nc): 90
• Trr, Typ, (ns): -
• Trr, Max, (ns): 300
• Pd, (w): 830
• Rthjc, Max, (ºc/w): 0.15
• Package Style: TO-247

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
100
60
50
40
30
20
10
10
35
30
25
20
15
10
0
5
0
0.3
4.0
0
f
= 1 MHz
4.5
0.4
Fig. 9. Forward Voltage Drop of Intrinsic Diode
5
5.0
0.5
10
5.5
Fig. 7. Input Admittance
0.6
Fig. 11. Capacitance
15
6.0
T
V
T
0.7
V
V
J
J
DS
SD
GS
= 125ºC
= 125ºC
6.5
- Volts
20
- Volts
- Volts
0.8
7.0
25
0.9
25ºC
7.5
T
J
30
= 25ºC
1.0
C oss
C iss
C rss
8.0
- 40ºC
35
1.1
8.5
1.2
9.0
40
100
0.1
40
35
30
25
20
15
10
16
14
12
10
10
8
6
4
2
0
1
5
0
10
0
0
T
T
Single Pulse
V
I
I
10
R
J
C
D
G
DS
DS(on)
= 150ºC
= 25ºC
= 9A
= 10mA
Fig. 12. Forward-Bias Safe Operating Area
= 500V
5
20
Limit
30
10
Fig. 8. Transconductance
40
Fig. 10. Gate Charge
Q
50
G
V
- NanoCoulombs
15
I
DS
D
60
- Amperes
100
- Volts
70
IXFH18N100Q3
IXFT18N100Q3
20
80
T
J
90
= - 40ºC
25
25ºC
125ºC
100
110
30
120
1,000
100µs
25µs
1ms
130
35