IXFV12N100PS IXYS, IXFV12N100PS Datasheet - Page 4

• Manufacturer Part Number: IXFV12N100PS
• Manufacturer: IXYS

Specifications of IXFV12N100PS

• Vdss, Max, (v): 1000
• Id(cont), Tc=25°c, (a): 12
• Rds(on), Max, Tj=25°c, (?): 1.05
• Ciss, Typ, (pf): 4080
• Qg, Typ, (nc): 80
• Trr, Typ, (ns): -
• Trr, Max, (ns): 300
• Pd, (w): 463
• Rthjc, Max, (ºc/w): 0.27
• Package Style: PLUS220SMD

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
100
16
14
12
10
40
35
30
25
20
15
10
10
8
6
4
2
0
5
0
3.0
0.3
0
f
= 1 MHz
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0.4
3.5
5
0.5
10
4.0
Fig. 7. Input Admittance
Fig. 11. Capacitance
0.6
15
4.5
V
V
V
SD
GS
DS
T
- Volts
- Volts
0.7
J
20
- Volts
= 125ºC
T
J
5.0
= 125ºC
- 40ºC
25ºC
0.8
25
C iss
C oss
C rss
5.5
0.9
30
T
J
6.0
= 25ºC
1.0
35
6.5
1.1
40
0.01
0.1
16
14
12
10
18
16
14
12
10
8
6
4
2
0
0.0001
8
6
4
2
0
1
0
0
V
I
I
10
D
G
DS
Fig. 12. Maximum Transient Thermal Impedance
= 6A
= 10mA
2
= 500V
IXFH12N100P IXFV12N100P
20
0.001
4
30
Fig. 8. Transconductance
6
Fig. 10. Gate Charge
Pulse Width - Seconds
40
Q
0.01
G
I
- NanoCoulombs
D
8
50
- Amperes
60
10
0.1
IXFV12N100PS
70
12
T
125ºC
80
J
IXYS REF: F_12N100P(75-744)4-01-08-A
= - 40ºC
14
25ºC
1
90
16
100
110
10
18