IXFA5N100P IXYS, IXFA5N100P Datasheet - Page 4

• Manufacturer Part Number: IXFA5N100P
• Manufacturer: IXYS

Specifications of IXFA5N100P

• Vdss, Max, (v): 1000
• Id(cont), Tc=25°c, (a): 5
• Rds(on), Max, Tj=25°c, (?): 2.80
• Ciss, Typ, (pf): 1830
• Qg, Typ, (nc): 33.4
• Trr, Typ, (ns): -
• Trr, Max, (ns): 200
• Pd, (w): 250
• Rthjc, Max, (ºc/w): 0.50
• Package Style: TO-263

IXYS reserves the right to change limits, test conditions, and dimensions.
10,000
1,000
100
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
16
14
12
10
10
8
6
4
2
0
0.4
4.0
0
f
= 1 MHz
0.5
5
4.5
Fig. 9. Forward Voltage Drop of
0.6
10
Fig. 7. Input Admittance
5.0
Fig. 11. Capacitance
T
J
= 125ºC
Intrinsic Diode
0.7
15
V
V
SD
DS
5.5
V
GS
T
- Volts
- Volts
J
0.8
= 125ºC
20
- Volts
- 40ºC
C iss
C oss
C rss
25ºC
6.0
0.9
25
6.5
1.0
T
30
J
= 25ºC
7.0
1.1
35
1.2
7.5
40
1.00
0.10
0.01
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
0.00001
9
8
7
6
5
4
3
2
1
0
0.0
0
V
I
I
D
G
DS
0.5
= 2.5A
= 10mA
4
Fig. 12. Maximum Transient Thermal
0.0001
= 500V
1.0
Fig. 8. Transconductance
8
IXFA5N100P IXFH5N100P
0.001
Fig. 10. Gate Charge
Q
Pulse Width - Seconds
1.5
G
12
- NanoCoulombs
I
D
Impedance
- Amperes
2.0
16
0.01
2.5
20
IXYS REF: F_5N100P(55-744)6-27-08
0.1
3.0
IXFP5N100P
T
24
J
= - 40ºC
3.5
28
1
25ºC
4.0
125ºC
32
10
4.5