IXFP4N100PM IXYS, IXFP4N100PM Datasheet - Page 4

• Manufacturer Part Number: IXFP4N100PM
• Manufacturer: IXYS

Specifications of IXFP4N100PM

• Vdss, Max, (v): 1000
• Id(cont), Tc=25°c, (a): 2.5
• Rds(on), Max, Tj=25°c, (?): 3.3
• Ciss, Typ, (pf): 1456
• Qg, Typ, (nc): 26
• Trr, Typ, (ns): -
• Trr, Max, (ns): 300
• Pd, (w): 57
• Rthjc, Max, (ºc/w): 2.2

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
100
4.5
3.5
2.5
1.5
0.5
10
12
10
5
4
3
2
1
0
8
6
4
2
0
3.0
0.3
0
f
= 1 MHz
Fig. 9. Forward Voltage Drop of Intrinsic Diode
3.5
0.4
5
C rss
4.0
0.5
10
Fig. 7. Input Admittance
Fig. 11. Capacitance
4.5
0.6
15
C oss
T
J
= 125ºC
V
V
V
GS
DS
SD
5.0
0.7
20
- Volts
- Volts
- Volts
C iss
T
J
= 125ºC
- 40ºC
25ºC
0.8
5.5
25
T
0.9
6.0
30
J
= 25ºC
1.0
6.5
35
1.1
7.0
40
0.01
4.5
3.5
2.5
1.5
0.5
0.1
16
14
12
10
10
0.00001
5
4
3
2
1
0
8
6
4
2
0
1
0
0
V
I
I
D
G
DS
0.5
Fig. 12. Maximum Transient Thermal Impedance
= 2A
= 10mA
0.0001
= 500V
5
1
10
0.001
1.5
Fig. 8. Transconductance
Fig. 10. Gate Charge
Pulse Width - Seconds
15
Q
G
2
0.01
I
- NanoCoulombs
D
- Amperes
IXFP4N100PM
2.5
20
T
J
0.1
= - 40ºC
3
25
25ºC
3.5
1
125ºC
30
IXYS REF: F_4N100P(45-744)11-22-10-A
4
10
35
4.5
100
40
5