IXFP05N100M IXYS, IXFP05N100M Datasheet

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IXFP05N100M

Manufacturer Part Number
IXFP05N100M
Description
Manufacturer
IXYS
Datasheet

Specifications of IXFP05N100M

Vdss, Max, (v)
1000
Id(cont), Tc=25°c, (a)
0.7
Rds(on), Max, Tj=25°c, (?)
17
Ciss, Typ, (pf)
260
Qg, Typ, (nc)
7.8
Trr, Typ, (ns)
-
Trr, Max, (ns)
300
Pd, (w)
25
Rthjc, Max, (ºc/w)
5.0
Package Style
OVERMOLDED TO-220
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2008 IXYS CORPORATION, All rights reserved
High Voltage HiperFET
(Electrically Isolated Tab)
D25
DM
A
GSS
DSS
J
JM
stg
L
SOLD
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C, unless otherwise specified)
T
T
Transient
T
T
T
T
I
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque
V
V
V
V
V
Test Conditions
Continuous
Test Conditions
S
V
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
≤ I
= 25°C
= 0V, I
= V
= ±30V, V
= V
= 0V
= 10V, I
DM
GS
, V
DSS
, I
D
DD
D
D
= 250μA
= 250μA
= 375mA, Note 1
≤ V
DS
= 0V
DSS
, T
J
GS
=150°C
= 1 MΩ
Preliminary Technical Information
T
J
= 125°C
JM
IXFP05N100M
Characteristic Values
1000
2.5
- 55 ... +150
Maximum Ratings
- 55 ... +150
Min.
1.13/10
1000
1000
± 30
± 40
150
Typ.
700
100
300
260
15
2.5
25
3
1
5
Nm/lb.in.
±100 nA
Max.
500 μA
4.5
17
25 μA
V/ns
mA
mJ
°C
°C
°C
°C
°C
W
V
V
Ω
V
V
V
A
A
V
g
V
I
R
t
OVERMOLDED TO-220
(IXFP...M) OUTLINE
G = Gate
S = Source
Features
Advantages
D25
rr
Plastic overmolded tab for electrical
isolation
International standard package
Avalanche rated
Low package inductance
Easy to mount
Space savings
High power density
G
DS(on)
DSS
D
S
= 700mA
= 1000V
≤ ≤ ≤ ≤ ≤
≤ ≤ ≤ ≤ ≤
D = Drain
17Ω Ω Ω Ω Ω
300ns
Isolated Tab
DS100069(11/08)

Related parts for IXFP05N100M

IXFP05N100M Summary of contents

Page 1

... GSS DSS DS DSS 10V 375mA, Note 1 DS(on © 2008 IXYS CORPORATION, All rights reserved Preliminary Technical Information IXFP05N100M Maximum Ratings 1000 = 1 MΩ 1000 GS ± 30 ± 40 700 JM 100 =150° ... +150 150 - 55 ... +150 300 260 1.13/10 2.5 Characteristic Values Min ...

Page 2

... Characteristic Values (T = 25°C unless otherwise specified) J Min. Typ. JM 1.8 200 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXFP05N100M ISOLATED TO-220 (IXFP...M) Max Terminals Gate 5.0 °C Drain (Collector Source (Emitter) Max. ...

Page 3

... IXYS CORPORATION, All rights reserved V = 10V 5. 375mA 375mA D 75 100 125 150 75 100 125 150 IXFP05N100M Fig. 2. Output Characteristics @ 125ºC 0.9 V 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 Volts DS Fig Normalized to I DS(on) Value vs. Drain Current 2 ...

Page 4

... J 2.2 2.0 1.8 25ºC 1.6 1.4 125ºC 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.7 0.8 0.9 1.0 1.1 1.2 1,000 100 Fig. 11. Maximum Transient Thermal Impedance 0.01 0.1 Pulse Width - Seconds IXFP05N100M Fig. 8. Forward Voltage Drop of Intrinsic Diode T = 125ºC J 0.4 0.45 0.5 0.55 0.6 0.65 0 Volts SD Fig. 10. Capacitance MHz Volts 25ºC J 0.75 ...

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