IXFB62N80Q3 IXYS, IXFB62N80Q3 Datasheet

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IXFB62N80Q3

Manufacturer Part Number
IXFB62N80Q3
Description
Q3-Class HiPerFETs
Manufacturer
IXYS
Datasheet

Specifications of IXFB62N80Q3

Vdss, Max, (v)
800
Id(cont), Tc=25°c, (a)
62
Rds(on), Max, Tj=25°c, (?)
0.14
Ciss, Typ, (pf)
13600
Qg, Typ, (nc)
270
Trr, Typ, (ns)
-
Trr, Max, (ns)
300
Pd, (w)
1560
Rthjc, Max, (ºc/w)
0.08
Package Style
PLUS264
HiperFET
Power MOSFET
Q3-Class
N-Channel Enhancement Mode
Fast Intrinsic Rectifier
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
T
T
T
T
T
F
Weight
Symbol
(T
BV
V
I
I
R
© 2011 IXYS CORPORATION, All Rights Reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
SOLD
C
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
J
DSS
= 25°C Unless Otherwise Specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Force
V
V
V
V
V
Test Conditions
S
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
TM
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
≤ I
= 25°C
= 0V, I
= V
= ±30V, V
= V
= 10V, I
DM
, V
GS
DSS
, I
DD
D
, V
D
D
= 3mA
≤ V
= 8mA
= 0.5 • I
GS
DS
= 0V
DSS
= 0V
, T
D25
J
GS
≤ 150°C
, Note 1
= 1MΩ
T
Advance Technical Information
J
= 125°C
JM
IXFB62N80Q3
30..120/6.7..27
800
3.5
Min.
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
1560
Typ.
800
800
±30
±40
180
150
300
260
62
10
62
50
5
±200 nA
Max.
140 mΩ
6.5
50 μA
4 mA
V/ns
N/lb.
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
g
J
Features
Advantages
Applications
V
I
R
t
PLUS264
G = Gate
S = Source
D25
rr
Low
Low Package Inductance
Fast Intrinsic Rectifier
Low R
High Power Density
Easy to Mount
Space Savings
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
Power Supplies
DC Choppers
Temperature and Lighting Controls
DS(on)
DSS
G
D
S
Intrinsic Gate Resistance
DS(on)
TM
≤ ≤ ≤ ≤ ≤
=
=
≤ ≤ ≤ ≤ ≤
and Q
D
Tab = Drain
G
140mΩ Ω Ω Ω Ω
800V
62A
300ns
= Drain
Tab
DS100341(05/11)

Related parts for IXFB62N80Q3

IXFB62N80Q3 Summary of contents

Page 1

... GSS DSS DS DSS 10V 0.5 • I DS(on D25 © 2011 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXFB62N80Q3 Maximum Ratings 800 = 1MΩ 800 GS ±30 ±40 62 180 ≤ 150° 1560 -55 ... +150 150 -55 ... +150 300 260 30 ...

Page 2

... I = 0.5 • DSS D D D25 120 0.13 Characteristic Values Min. Typ. JM 1.6 13.4 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXFB62N80Q3 PLUS264 (IXFB) Outline TM Max Ω 0.08 °C/W °C/W Max 250 A 1.5 V 300 ns μ ...

Page 3

... Value vs 125º 25º -50 80 100 120 140 IXFB62N80Q3 Fig. 2. Extended Output Characteristics @ 10V Volts DS Fig Normalized to I DS(on) D Junction Temperature V = 10V 62A D ...

Page 4

... IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 100 = 125ºC 25ºC - 40ºC 7.0 7.5 8.0 8.5 9 25ºC J 1.0 1.2 1.4 1000 C iss 100 C oss C rss IXFB62N80Q3 Fig. 8. Transconductance Amperes D Fig. 10. Gate Charge 400V ...

Page 5

... IXYS CORPORATION, All Rights Reserved Fig. 13. Maximum Transient Thermal Impedance 0.01 0.1 Pulse Width - Seconds IXFB62N80Q3 1 10 IXYS REF: F_62N80Q3(Q9) 5-20-11 ...

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