IXFX44N80Q3 IXYS, IXFX44N80Q3 Datasheet - Page 4
![no-image](/images/manufacturer_photos/0/3/352/ixys_sml.jpg)
IXFX44N80Q3
Manufacturer Part Number
IXFX44N80Q3
Description
Q3-Class HiPerFETs
Manufacturer
IXYS
Datasheet
1.IXFX44N80Q3.pdf
(5 pages)
Specifications of IXFX44N80Q3
Vdss, Max, (v)
800
Id(cont), Tc=25°c, (a)
44
Rds(on), Max, Tj=25°c, (?)
0.19
Ciss, Typ, (pf)
9840
Qg, Typ, (nc)
185
Trr, Typ, (ns)
-
Trr, Max, (ns)
300
Pd, (w)
1250
Rthjc, Max, (ºc/w)
0.10
Package Style
PLUS247
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
1,000
120
100
100
80
60
40
20
60
50
40
30
20
10
10
0
0
0.3
5
0
f
= 1 MHz
0.4
5.5
Fig. 9. Forward Voltage Drop of Intrinsic Diode
5
0.5
6
10
0.6
Fig. 7. Input Admittance
6.5
Fig. 11. Capacitance
T
J
15
= 125ºC
T
0.7
J
= 125ºC
V
V
V
7
SD
DS
GS
0.8
- Volts
20
- Volts
- Volts
7.5
0.9
25ºC
25
T
J
C iss
C oss
C rss
8
= 25ºC
1.0
30
8.5
1.1
- 40ºC
35
1.2
9
1.3
9.5
40
1000
100
0.1
10
80
70
60
50
40
30
20
10
16
14
12
10
0
1
8
6
4
2
0
10
0
0
T
T
Single Pulse
V
I
I
J
C
D
G
DS
= 150ºC
= 25ºC
= 22A
= 10mA
= 400V
10
Fig. 12. Forward-Bias Safe Operating Area
50
R
DS(on)
20
Limit
Fig. 8. Transconductance
Fig. 10. Gate Charge
100
Q
G
- NanoCoulombs
30
I
D
V
DS
- Amperes
100
- Volts
150
40
IXFK44N80Q3
IXFX44N80Q3
T
50
J
200
= - 40ºC
125ºC
25ºC
60
250
25µs
100µs
1ms
1,000
70