IXFN82N60Q3 IXYS, IXFN82N60Q3 Datasheet - Page 4

• Manufacturer Part Number: IXFN82N60Q3
• Description: Q3-Class HiPerFETs
• Manufacturer: IXYS

Specifications of IXFN82N60Q3

• Vdss, Max, (v): 600
• Id(cont), Tc=25°c, (a): 66
• Rds(on), Max, Tj=25°c, (?): 0.075
• Ciss, Typ, (pf): 13500
• Qg, Typ, (nc): 275
• Trr, Typ, (ns): -
• Trr, Max, (ns): 300
• Pd, (w): 960
• Rthjc, Max, (ºc/w): 0.13
• Package Style: SOT-227

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
1,000
100
100
320
280
240
200
160
120
10
90
80
70
60
50
40
30
20
10
80
40
0
0
3.5
0.3
0
f
= 1 MHz
4.0
Fig. 9. Forward Voltage Drop of Intrinsic Diode
5
0.5
4.5
10
0.7
5.0
T
Fig. 7. Input Admittance
J
Fig. 11. Capacitance
= 125ºC
15
5.5
0.9
T
V
V
V
J
DS
SD
GS
= 125ºC
6.0
20
- Volts
- Volts
- Volts
T
J
1.1
= 25ºC
6.5
25
25ºC
C oss
C rss
7.0
C iss
1.3
30
7.5
- 40ºC
1.5
35
8.0
1.7
8.5
40
1000
100
100
16
14
12
10
90
80
70
60
50
40
30
20
10
10
8
6
4
2
0
0
1
0
10
0
V
I
I
D
G
DS
10
T
T
Single Pulse
= 41A
= 10mA
50
J
C
= 300V
= 150ºC
= 25ºC
R
Fig. 12. Forward-Bias Safe Operating Area
DS(on)
20
100
Limit
Fig. 8. Transconductance
30
Fig. 10. Gate Charge
150
Q
40
G
- NanoCoulombs
I
D
V
- Amperes
DS
IXFN82N60Q3
200
100
50
- Volts
60
250
70
T
J
300
= - 40ºC
80
25ºC
125ºC
350
90
250µs
1ms
1,000
100
400