IXFA22N60P3 IXYS, IXFA22N60P3 Datasheet - Page 4
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IXFA22N60P3
Manufacturer Part Number
IXFA22N60P3
Description
Polar3 HiperFETS
Manufacturer
IXYS
Datasheet
1.IXFA22N60P3.pdf
(6 pages)
Specifications of IXFA22N60P3
Vdss, Max, (v)
600
Id(cont), Tc=25°c, (a)
22
Rds(on), Max, Tj=25°c, (?)
0.360
Ciss, Typ, (pf)
2600
Qg, Typ, (nc)
38
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
500
Rthjc, Max, (ºc/w)
0.25
Package Style
TO-263
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
100
35
30
25
20
15
10
40
35
30
25
20
15
10
5
0
10
5
0
1
3.5
0.3
0
f
= 1 MHz
Fig. 9. Forward Voltage Drop of Intrinsic Diode
5
0.4
4.0
10
0.5
4.5
Fig. 7. Input Admittance
Fig. 11. Capacitance
15
T
0.6
J
V
V
V
5.0
= 125ºC
GS
SD
DS
- Volts
- Volts
20
- Volts
T
J
0.7
= 125ºC
- 40ºC
25ºC
5.5
25
C oss
C rss
C iss
0.8
30
6.0
T
J
= 25ºC
0.9
35
6.5
1.0
40
100
0.1
10
45
40
35
30
25
20
15
10
10
1
5
0
9
8
7
6
5
4
3
2
1
0
10
0
0
T
T
Single Pulse
J
C
V
I
I
R
D
G
= 150ºC
DS
= 25ºC
DS(on)
= 11A
= 10mA
5
IXFQ22N60P3 IXFH22N60P3
= 300V
IXFA22N60P3 IXFP22N60P3
Fig. 12. Forward-Bias Safe Operating Area
5
Limit
10
10
Fig. 8. Transconductance
Fig. 10. Gate Charge
15
Q
G
- NanoCoulombs
15
I
V
D
DS
- Amperes
100
- Volts
20
20
25
T
J
= - 40ºC
25
30
25ºC
125ºC
30
35
25µs
100µs
1ms
1,000
40
35