IXFP4N60P3 IXYS, IXFP4N60P3 Datasheet - Page 4

• Manufacturer Part Number: IXFP4N60P3
• Description: Polar3 HiperFETS
• Manufacturer: IXYS

Specifications of IXFP4N60P3

• Vdss, Max, (v): 600
• Id(cont), Tc=25°c, (a): 4
• Rds(on), Max, Tj=25°c, (?): 2.2
• Ciss, Typ, (pf): 365
• Qg, Typ, (nc): 6.9
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 114
• Rthjc, Max, (ºc/w): 1.10
• Package Style: TO-220

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
1,000
100
4.5
3.5
2.5
1.5
0.5
12
10
10
8
6
4
2
0
1
5
4
3
2
1
0
0.3
3.0
0
f
= 1 MHz
Fig. 9. Forward Voltage Drop of Intrinsic Diode
3.5
0.4
5
4.0
0.5
10
Fig. 7. Input Admittance
Fig. 11. Capacitance
4.5
0.6
15
T
V
T
V
V
J
J
DS
SD
GS
5.0
= 125ºC
= 125ºC
0.7
20
- Volts
- Volts
- Volts
5.5
0.8
25
25ºC
6.0
0.9
T
30
J
= 25ºC
C iss
C oss
C rss
6.5
- 40ºC
1.0
35
7.0
1.1
40
0.1
10
10
1
7
6
5
4
3
2
1
0
9
8
7
6
5
4
3
2
1
0
10
0
0
R
T
T
Single Pulse
V
I
I
DS(on)
J
C
0.5
D
G
DS
= 150ºC
= 25ºC
= 2A
= 10mA
= 300V
Limit
1
Fig. 12. Forward-Bias Safe Operating Area
1
1.5
IXFY4N60P3 IXFA4N60P3
Fig. 8. Transconductance
2
Fig. 10. Gate Charge
2
Q
G
I
- NanoCoulombs
D
V
3
2.5
DS
- Amperes
100
- Volts
3
T
4
J
= - 40ºC
3.5
25ºC
125ºC
IXFP4N60P3
5
4
4.5
6
5
25µs
100µs
1ms
1,000
5.5
7