IXFX48N55 IXYS, IXFX48N55 Datasheet
IXFX48N55
Manufacturer Part Number
IXFX48N55
Description
Standard HiperFETs (50V to 1200V)
Manufacturer
IXYS
Datasheet
1.IXFX48N55.pdf
(2 pages)
Specifications of IXFX48N55
Vdss, Max, (v)
550
Id(cont), Tc=25°c, (a)
48
Rds(on), Max, Tj=25°c, (?)
0.11
Ciss, Typ, (pf)
8900
Qg, Typ, (nc)
330
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
560
Rthjc, Max, (ºc/w)
0.22
Package Style
PLUS247
© 2000 IXYS All rights reserved
HiPerFET
Power MOSFETs
Single MOSFET Die
Avalanche Rated
Preliminary data
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
M
Weight
Symbol
V
V
I
I
R
IXYS reserves the right to change limits, test conditions, and dimensions.
D25
DM
AR
GSS
DSS
J
JM
stg
L
DGR
AR
AS
D
DSS
GS
GSM
DSS
GS(th)
DS(on)
d
Note 1
V
V
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.063 in.) from case for 10 s
Mounting torque
Test Conditions
V
V
V
V
S
C
C
C
C
C
C
GS
J
J
J
GS
DS
GS
GS
DS
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
£ I
£ 150°C, R
= 25°C
= 0 V, I
= V
= 10 V, I
= ±20 V, V
= V
= 0 V
DM
GS
TM
, di/dt £ 100 A/ms, V
DSS
, I
D
D
= 3mA
= 8mA
D
= 0.5 • I
G
DS
= 2 W
= 0
TO-264
PLUS 247
TO-264
D25
GS
= 1 MW
DD
£ V
T
(T
J
DSS
J
= 125°C
= 25°C, unless otherwise specified)
JM
IXFK 48N55
IXFX 48N55
min.
550
2.5
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
typ.
0.9/6 Nm/lb.in.
10
550
550
±20
±30
192
560
150
300
6
48
44
60
3
5
max.
±200 nA
110 mW
100 mA
4.5 V
2 mA
V/ns
mJ
°C
°C
°C
°C
W
V
V
V
V
A
A
A
V
J
g
g
V
I
R
t
TO-264 AA (IXFK)
G = Gate
S = Source
Features
• International standard packages
• Low R
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
• Low package inductance
• Fast intrinsic rectifier
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
• DC choppers
• AC motor control
• Temperature and lighting controls
Advantages
• PLUS 247
• Space savings
• High power density
PLUS 247
D25
rr
rated
- easy to drive and to protect
power supplies
mounting
DSS
DS(on)
£ 250 ns
G
DS (on)
D
= 550
=
= 110 mW
TM
TM
G
HDMOS
(IXFK)
package for clip or spring
D
48
S
D = Drain
TAB = Drain
TM
process
A
V
98712 (3/24/00)
(TAB)
(TAB)
1 - 2
Related parts for IXFX48N55
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
HiPerFET Power MOSFETs
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
J-K-Type Flip-Flop
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
HiPerRF Power MOSFETs
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Rectifier Module for Three Phase Power Factor Correction
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules /Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules /Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
IXFX48N55 Summary of contents
Page 1
... DSS DS DSS 0.5 • I DS(on Note 1 IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved IXFK 48N55 IXFX 48N55 Maximum Ratings 550 = 1 MW 550 GS ±20 ±30 48 192 £ V ...
Page 2
... DSS D D25 65 0.22 0.15 Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. max 100 V 1 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 IXFK 48N55 IXFX 48N55 PLUS247 TM (IXFX) Outline ...