IXFN100N50Q3 IXYS, IXFN100N50Q3 Datasheet

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IXFN100N50Q3

Manufacturer Part Number
IXFN100N50Q3
Description
Q3-Class HiPerFETs
Manufacturer
IXYS
Datasheet

Specifications of IXFN100N50Q3

Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
82
Rds(on), Max, Tj=25°c, (?)
0.049
Ciss, Typ, (pf)
13800
Qg, Typ, (nc)
255
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
960
Rthjc, Max, (ºc/w)
0.13
Package Style
SOT-227
HiperFET
Power MOSFET
Q3-Class
N-Channel Enhancement Mode
Fast Intrinsic Rectifier
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
T
T
T
V
M
Weight
Symbol
(T
BV
V
I
I
R
© 2011 IXYS CORPORATION, All Rights Reserved
D25
DM
A
GSS
DSS
J
JM
stg
DSS
DGR
GSS
GSM
AS
D
ISOL
GS(th)
DS(on)
d
J
DSS
= 25°C Unless Otherwise Specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
50/60 Hz, RMS, t = 1minute
I
Mounting Torque for Base Plate
Terminal Connection Torque
V
V
V
V
V
Test Conditions
S
ISOL
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
TM
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
≤ I
= 25°C
≤ 1mA,
= 0V, I
= V
= ±30V, V
= V
= 10V, I
DM
, V
GS
DSS
, I
DD
D
, V
D
D
= 3mA
≤ V
= 8mA
= 50A, Note 1
GS
DS
= 0V
t = 1s
DSS
= 0V
, T
J
GS
≤ 150°C
= 1MΩ
T
Advance Technical Information
J
= 125°C
IXFN100N50Q3
JM
500
3.5
Min.
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
1.3/11.5
1.5/13
2500
3000
Typ.
500
500
±30
±40
300
100
960
150
82
50
30
5
±200 nA
Nm/lb.in.
Nm/lb.in.
Max.
2.5 mA
6.5
50 μA
49 mΩ
V/ns
V~
V~
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
g
J
V
I
R
t
miniBLOC
G = Gate
S = Source
Either Source Terminal S can be used as
the Source Terminal or the Kelvin Source
(Gate Return) Terminal.
Features
Advantages
Applications
D25
rr
International Standard Package
Low
miniBLOC with Aluminum Nitride
Isolation
Low Package Inductance
Fast Intrinsic Rectifier
Low R
High Power Density
Easy to Mount
Space Savings
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
Power Supplies
DC Choppers
Temperature and Lighting Controls
DS(on)
DSS
Intrinsic Gate Resistance
E153432
DS(on)
≤ ≤ ≤ ≤ ≤
=
=
≤ ≤ ≤ ≤ ≤
G
and Q
D = Drain
S
49mΩ Ω Ω Ω Ω
G
500V
82A
250ns
D
DS100308(03/11)
S

Related parts for IXFN100N50Q3

IXFN100N50Q3 Summary of contents

Page 1

... GSS DSS DS DSS 10V 50A, Note 1 DS(on © 2011 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXFN100N50Q3 Maximum Ratings 500 = 1MΩ 500 GS ±30 ±40 82 300 JM 100 5 ≤ 150° 960 -55 ... +150 150 -55 ... +150 2500 3000 1 ...

Page 2

... I = 50A 110 DSS D 115 0.05 Characteristic Values Min. Typ. JM 3.5 30.0 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXFN100N50Q3 SOT-227B (IXFN) Outline Max Ω (M4 screws (4x) supplied 0.13 °C/W °C/W Max. 100 A 400 A 1.5 V 250 ns μ ...

Page 3

... Value vs 125º 25º 120 140 160 180 200 220 IXFN100N50Q3 Fig. 2. Extended Output Characteristics @ 10V Volts DS Fig Normalized to I DS(on) Junction Temperature V = 10V GS -50 ...

Page 4

... IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 25ºC - 40ºC 7.0 7.5 8.0 8.5 9.0 - Volts T = 25ºC J 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1000 C iss C oss C rss IXFN100N50Q3 Fig. 8. Transconductance 110 100 Amperes D Fig. 10. Gate Charge 250V DS 14 ...

Page 5

... IXYS CORPORATION, All Rights Reserved Fig. 13. Maximum Transient Thermal Impedance 0.01 0.1 Pulse Width - Seconds IXFN100N50Q3 1 10 IXYS REF: F_100N50Q3(Q9)02-24-11 ...

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