IXFT44N50Q3 IXYS, IXFT44N50Q3 Datasheet - Page 4

• Manufacturer Part Number: IXFT44N50Q3
• Description: Q3-Class HiPerFETs
• Manufacturer: IXYS

Specifications of IXFT44N50Q3

• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 44
• Rds(on), Max, Tj=25°c, (?): 0.14
• Ciss, Typ, (pf): 4800
• Qg, Typ, (nc): 93
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 830
• Rthjc, Max, (ºc/w): 0.15
• Package Style: TO-268

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
140
120
100
100
70
60
50
40
30
20
10
80
60
40
20
10
0
0
0.3
0
4
f
4.5
= 1 MHz
0.4
Fig. 9. Forward Voltage Drop of Intrinsic Diode
5
5
0.5
5.5
10
0.6
Fig. 7. Input Admittance
Fig. 11. Capacitance
6
15
T
J
0.7
6.5
= 125ºC
T
J
V
V
V
DS
= 125ºC
SD
GS
0.8
- Volts
20
- Volts
- Volts
7
7.5
0.9
25ºC
25
T
J
8
1.0
= 25ºC
8.5
30
C iss
C oss
C rss
1.1
- 40ºC
9
35
1.2
9.5
1.3
40
10
1000
100
0.1
16
14
12
10
10
50
45
40
35
30
25
20
15
10
8
6
4
2
0
5
0
1
10
0
0
10
V
I
I
T
T
Single Pulse
D
G
DS
R
J
C
= 22A
= 10mA
DS(on)
= 150ºC
= 25ºC
= 250V
10
20
Fig. 12. Forward-Bias Safe Operating Area
Limit
30
20
Fig. 8. Transconductance
40
Fig. 10. Gate Charge
Q
50
G
- NanoCoulombs
30
I
D
V
60
DS
- Amperes
100
- Volts
70
T
J
40
IXFT44N50Q3
= - 40ºC
IXFH44N50Q3
80
25ºC
90
50
125ºC
100
110
60
25µs
100µs
1ms
120
1,000
130
70