IXFK40N50Q2 IXYS, IXFK40N50Q2 Datasheet - Page 4

• Manufacturer Part Number: IXFK40N50Q2
• Description: Q2-Class HiperFETs
• Manufacturer: IXYS

Specifications of IXFK40N50Q2

• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 40
• Rds(on), Max, Tj=25°c, (?): 0.16
• Ciss, Typ, (pf): 4850
• Qg, Typ, (nc): 110
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 560
• Rthjc, Max, (ºc/w): 0.22
• Package Style: TO-264

IXYS reserves the right to change limits, test conditions, and dimensions.
10000
1000
120
110
100
100
50
45
40
35
30
25
20
15
10
90
80
70
60
50
40
30
20
10
5
0
0
3.0
0.4
0
Fig. 9. Source Current vs. Source-To-Drain
f
= 1MHz
0.5
3.5
5
Fig. 7. Input Admittance
0.6
10
T
4.0
J
Fig. 11. Capacitance
= 125ºC
T
J
0.7
V
15
V
= 125ºC
V
G S
S D
4.5
Voltage
- 40ºC
D S
25ºC
- Volts
- Volts
0.8
20
- Volts
C
rss
5.0
C
0.9
oss
25
T
J
C
= 25ºC
5.5
iss
1.0
30
6.0
1.1
35
1.2
40
6.5
1000
100
55
50
45
40
35
30
25
20
15
10
10
10
5
0
9
8
7
6
5
4
3
2
1
0
1
10
0
0
Fig. 12. Forward-Bias Safe Operating Area
R
V
I
I
T
T
Single Pulse
5
D
G
10
J
C
DS(on)
DS
= 20A
= 10m A
= 150ºC
= 25ºC
10 15
= 250V
Fig. 8. Transconductance
20
Limit
Fig. 10. Gate Charge
30
Q
20 25
G
40
I
- nanoCoulombs
D
V
DC
D S
- Amperes
50
30 35
IXFK40N50Q2
100
- Volts
60
40 45
70
80
125ºC
T
50 55
J
90 100 110
= - 40ºC
25ºC
100µs
1ms
25µs
10m s
60 65
1000