IXFT30N50Q3 IXYS, IXFT30N50Q3 Datasheet - Page 4

• Manufacturer Part Number: IXFT30N50Q3
• Description: Q3-Class HiPerFETs
• Manufacturer: IXYS

Specifications of IXFT30N50Q3

• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 30
• Rds(on), Max, Tj=25°c, (?): 0.20
• Ciss, Typ, (pf): 3200
• Qg, Typ, (nc): 62
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 690
• Rthjc, Max, (ºc/w): 0.18
• Package Style: TO-268

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10000
1000
100
100
80
60
40
20
10
45
40
35
30
25
20
15
10
0
5
0
0.3
3.5
0
f
= 1 MHz
4
0.4
Fig. 9. Forward Voltage Drop of Intrinsic Diode
5
4.5
0.5
10
5
Fig. 7. Input Admittance
0.6
Fig. 11. Capacitance
5.5
15
T
J
T
= 125ºC
V
J
0.7
V
V
DS
= 125ºC
SD
6
GS
20
- Volts
- Volts
- Volts
6.5
0.8
25ºC
25
7
0.9
T
J
7.5
= 25ºC
30
1.0
C iss
C oss
C rss
- 40ºC
8
35
1.1
8.5
1.2
40
9
100
0.1
16
14
12
10
10
45
40
35
30
25
20
15
10
8
6
4
2
0
5
0
1
10
0
0
R
DS(on)
T
T
Single Pulse
J
C
V
I
I
= 150ºC
= 25ºC
D
G
DS
5
10
= 15A
= 10mA
Limit
= 250V
Fig. 12. Forward-Bias Safe Operating Area
10
20
Fig. 8. Transconductance
15
30
Fig. 10. Gate Charge
Q
G
20
- NanoCoulombs
I
D
40
V
- Amperes
DS
100
25
- Volts
50
IXFT30N50Q3
30
IXFH30N50Q3
60
35
T
J
70
= - 40ºC
40
25ºC
125ºC
25µs
100µs
1ms
80
45
1,000
90
50