IXFQ24N50P2 IXYS, IXFQ24N50P2 Datasheet - Page 4
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IXFQ24N50P2
Manufacturer Part Number
IXFQ24N50P2
Description
Polar2 HiperFETS
Manufacturer
IXYS
Datasheet
1.IXFQ24N50P2.pdf
(5 pages)
Specifications of IXFQ24N50P2
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
24
Rds(on), Max, Tj=25°c, (?)
0.27
Ciss, Typ, (pf)
2890
Qg, Typ, (nc)
48
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
480
Rthjc, Max, (ºc/w)
0.26
Package Style
TO-3P
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
100
35
30
25
20
15
10
10
80
70
60
50
40
30
20
10
5
0
0
3.5
0.3
0
f
= 1 MHz
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0.4
5
4.0
0.5
10
4.5
Fig. 7. Input Admittance
Fig. 11. Capacitance
0.6
15
V
V
5.0
GS
DS
T
V
J
SD
- Volts
- Volts
= 125ºC
T
J
0.7
- Volts
20
= 125ºC
- 40ºC
C iss
C oss
C rss
25ºC
5.5
0.8
25
6.0
T
0.9
30
J
= 25ºC
6.5
1.0
35
1.1
7.0
40
0.01
100
0.1
50
40
30
20
10
10
10
0
1
8
6
4
2
0
10
0
0
R
DS(on)
T
T
Single Pulse
V
I
I
J
C
D
G
DS
= 150ºC
5
= 25ºC
= 12A
= 10mA
= 250V
Limit
5
Fig. 12. Forward-Bias Safe Operating Area
10
10
15
Fig. 8. Transconductance
Fig. 10. Gate Charge
Q
20
V
G
DS
15
I
- NanoCoulombs
D
- Amperes
- Volts
IXFQ24N50P2
100
25
20
30
T
J
= - 40ºC
35
25
25ºC
125ºC
10ms
40
30
25µs
100µs
1ms
45
1000
35
50