IXFQ24N50P2 IXYS, IXFQ24N50P2 Datasheet - Page 4

• Manufacturer Part Number: IXFQ24N50P2
• Description: Polar2 HiperFETS
• Manufacturer: IXYS

Specifications of IXFQ24N50P2

• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 24
• Rds(on), Max, Tj=25°c, (?): 0.27
• Ciss, Typ, (pf): 2890
• Qg, Typ, (nc): 48
• Trr, Typ, (ns): -
• Trr, Max, (ns): 200
• Pd, (w): 480
• Rthjc, Max, (ºc/w): 0.26
• Package Style: TO-3P

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
100
35
30
25
20
15
10
10
80
70
60
50
40
30
20
10
5
0
0
3.5
0.3
0
f
= 1 MHz
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0.4
5
4.0
0.5
10
4.5
Fig. 7. Input Admittance
Fig. 11. Capacitance
0.6
15
V
V
5.0
GS
DS
T
V
J
SD
- Volts
- Volts
= 125ºC
T
J
0.7
- Volts
20
= 125ºC
- 40ºC
C iss
C oss
C rss
25ºC
5.5
0.8
25
6.0
T
0.9
30
J
= 25ºC
6.5
1.0
35
1.1
7.0
40
0.01
100
0.1
50
40
30
20
10
10
10
0
1
8
6
4
2
0
10
0
0
R
DS(on)
T
T
Single Pulse
V
I
I
J
C
D
G
DS
= 150ºC
5
= 25ºC
= 12A
= 10mA
= 250V
Limit
5
Fig. 12. Forward-Bias Safe Operating Area
10
10
15
Fig. 8. Transconductance
Fig. 10. Gate Charge
Q
20
V
G
DS
15
I
- NanoCoulombs
D
- Amperes
- Volts
IXFQ24N50P2
100
25
20
30
T
J
= - 40ºC
35
25
25ºC
125ºC
10ms
40
30
25µs
100µs
1ms
45
1000
35
50