IXFP20N50P3M IXYS, IXFP20N50P3M Datasheet

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IXFP20N50P3M

Manufacturer Part Number
IXFP20N50P3M
Description
Polar3 HiperFETS
Manufacturer
IXYS
Datasheet

Specifications of IXFP20N50P3M

Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
8
Rds(on), Max, Tj=25°c, (?)
0.300
Ciss, Typ, (pf)
1800
Qg, Typ, (nc)
36
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
58
Rthjc, Max, (ºc/w)
2.15
Package Style
TO220 OVERMOLDED
Polar3
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2011 IXYS CORPORATION, All Rights Reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
sold
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C Unless Otherwise Specified)
TM
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
1.6mm (0.062in.) from Case for 10s
Plastic Body for 10 seconds
Mounting Torque
V
V
V
V
V
Test Conditions
I
S
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
HiperFET
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
≤ I
= 25°C
= 0V, I
= V
= ±30V, V
= V
= 10V, I
DM
GS
, V
DSS
, I
DD
D
, V
D
D
= 1mA
≤ V
= 1.5mA
= 10A, Note 1
GS
DS
= 0V
DSS
= 0V
, T
TM
J
GS
≤ 150°C
= 1MΩ
T
Advance Technical Information
J
= 125°C
IXFP20N50P3M
JM
500
Characteristic Values
Min.
3.0
-55 ... +150
-55 ... +150
Maximum Ratings
1.13 / 10
± 30
± 40
500
500
300
150
300
260
Typ.
2.5
40
16
35
58
8
±100
Max.
1.25 mA
Nm/lb.in.
300 mΩ
5.0
25
V/ns
mJ
μA
°C
°C
°C
°C
°C
nA
W
V
V
V
V
A
A
A
V
V
g
V
I
R
OVERMOLDED
G = Gate
S = Source
Features
Advantages
Applications
D25
Plastic Overmolded Tab for Electrical
Isolation
Fast Intrinsic Rectifier
Avalanche Rated
Low R
Low Package Inductance
High Power Density
Easy to Mount
Space Savings
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
Laser Drivers
AC and DC Motor Drives
Robotics and Servo Controls
DS(on)
DSS
G
D S
DS(ON)
= 8A
= 500V
≤ ≤ ≤ ≤ ≤
and Q
D = Drain
300mΩ Ω Ω Ω Ω
G
DS100415(11/11)

Related parts for IXFP20N50P3M

IXFP20N50P3M Summary of contents

Page 1

... GSS DSS DS DSS 10V 10A, Note 1 DS(on © 2011 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXFP20N50P3M Maximum Ratings 500 = 1MΩ 500 GS ± 30 ± 300 ≤ 150° -55 ... +150 150 -55 ... +150 300 260 1 ...

Page 2

... I = 10A 7 DSS D 13 Characteristic Values Min. Typ. JM 8.0 0.6 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXFP20N50P3M ISOLATED TO-220 (IXFP...M) Max Ω Terminals Gate 2.15 °C Drain 3 - Source Max 1.4 ...

Page 3

... Value vs 125º 25º -50 IXFP20N50P3M Fig. 2. Extended Output Characteristics @ 10V Volts DS Fig Normalized to I DS(on) D Junction Temperature V = 10V GS -50 - ...

Page 4

... V DS IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 25ºC - 40ºC 5.0 5.5 6.0 6.5 - Volts T = 25ºC J 0.8 0.9 1.0 1.1 - Volts C iss C oss C rss Volts IXFP20N50P3M Fig. 8. Transconductance 40º Amperes D Fig. 10. Gate Charge 250V 9 ...

Page 5

... IXYS CORPORATION, All Rights Reserved Fig. 13. Maximum Transient Thermal Impedance 0.01 0.1 Pulse Width - Seconds IXFP20N50P3M 1 10 IXYS REF: F_20N50P3(W5) 11-14-11 100 ...

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