IXFH70N30Q3 IXYS, IXFH70N30Q3 Datasheet - Page 4

• Manufacturer Part Number: IXFH70N30Q3
• Description: Q3-Class HiPerFETs
• Manufacturer: IXYS

Specifications of IXFH70N30Q3

• Vdss, Max, (v): 300
• Id(cont), Tc=25°c, (a): 70
• Rds(on), Max, Tj=25°c, (?): 0.054
• Ciss, Typ, (pf): 4735
• Qg, Typ, (nc): 98
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 830
• Rthjc, Max, (ºc/w): 0.15
• Package Style: TO-247

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
100
220
200
180
160
140
120
100
100
80
60
40
20
90
80
70
60
50
40
30
20
10
10
0
0
0.3
4
0
f
4.5
0.4
= 1 MHz
Fig. 9. Forward Voltage Drop of Intrinsic Diode
5
5
0.5
5.5
10
0.6
Fig. 7. Input Admittance
6
Fig. 11. Capacitance
0.7
T
15
J
= 125ºC
6.5
V
V
V
T
0.8
SD
DS
GS
J
= 125ºC
- Volts
20
- Volts
7
- Volts
0.9
7.5
25
1.0
25ºC
T
8
J
= 25ºC
1.1
8.5
30
C iss
C oss
C rss
- 40ºC
1.2
9
35
1.3
9.5
1.4
10
40
1000
100
70
60
50
40
30
20
10
16
14
12
10
10
0
8
6
4
2
0
1
10
0
0
T
T
Single Pulse
V
I
I
J
C
D
G
DS
10
R
= 150ºC
= 25ºC
= 35A
= 10mA
DS(on)
= 150V
20
Fig. 12. Forward-Bias Safe Operating Area
Limit
20
40
Fig. 8. Transconductance
30
Fig. 10. Gate Charge
Q
40
G
- NanoCoulombs
I
60
D
V
- Amperes
DS
100
50
- Volts
80
IXFT70N30Q3
IXFH70N30Q3
60
70
T
100
J
= - 40ºC
25µs
100µs
1ms
80
25ºC
125ºC
120
90
1,000
100
140