IXFT50N30Q3 IXYS, IXFT50N30Q3 Datasheet - Page 4

• Manufacturer Part Number: IXFT50N30Q3
• Description: Q3-Class HiPerFETs
• Manufacturer: IXYS

Specifications of IXFT50N30Q3

• Vdss, Max, (v): 300
• Id(cont), Tc=25°c, (a): 50
• Rds(on), Max, Tj=25°c, (?): 0.08
• Ciss, Typ, (pf): 3160
• Qg, Typ, (nc): 65
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 690
• Rthjc, Max, (ºc/w): 0.18
• Package Style: TO-268

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10000
1000
160
140
120
100
100
55
50
45
40
35
30
25
20
15
10
80
60
40
20
10
5
0
0
4.5
0.3
0
f
0.4
5
= 1 MHz
Fig. 9. Forward Voltage Drop of Intrinsic Diode
5
5.5
0.5
10
6
0.6
Fig. 7. Input Admittance
Fig. 11. Capacitance
T
6.5
J
15
= 125ºC
0.7
V
V
V
DS
SD
7
GS
T
J
0.8
20
- Volts
- Volts
- Volts
= 125ºC
7.5
0.9
25
T
8
25ºC
J
= 25ºC
1.0
8.5
30
C rss
C iss
C oss
1.1
- 40ºC
9
35
1.2
9.5
1.3
40
10
1000
100
10
50
40
30
20
10
16
14
12
10
1
0
8
6
4
2
0
10
0
0
T
T
Single Pulse
V
I
I
R
J
C
D
G
DS
DS(on)
= 150ºC
= 25ºC
= 25A
= 10mA
10
= 150V
Fig. 12. Forward-Bias Safe Operating Area
10
Limit
20
Fig. 8. Transconductance
20
30
Fig. 10. Gate Charge
Q
G
- NanoCoulombs
I
D
V
40
DS
- Amperes
100
30
- Volts
50
IXFH50N30Q3
IXFT50N30Q3
40
60
T
J
25µs
100µs
1ms
= - 40ºC
70
25ºC
125ºC
50
80
1,000
60
90