IXFX250N10P IXYS, IXFX250N10P Datasheet - Page 4

• Manufacturer Part Number: IXFX250N10P
• Manufacturer: IXYS

Specifications of IXFX250N10P

• Vdss, Max, (v): 100
• Id(cont), Tc=25°c, (a): 250
• Rds(on), Max, Tj=25°c, (?): 0.0065
• Ciss, Typ, (pf): 16000
• Qg, Typ, (nc): 205
• Trr, Typ, (ns): -
• Trr, Max, (ns): 200
• Pd, (w): 1250
• Rthjc, Max, (ºc/w): 0.12
• Package Style: PLUS247

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
1,000
350
300
250
200
150
100
200
180
160
140
120
100
100
50
80
60
40
20
10
0
0
0.2
3.5
0
0.3
f
4.0
Fig. 9. Forward Voltage Drop of Intrinsic Diode
= 1 MHz
5
0.4
4.5
0.5
10
T
Fig. 7. Input Admittance
5.0
0.6
J
Fig. 11. Capacitance
= 150ºC
15
V
0.7
GS
V
5.5
SD
V
- Volts
DS
- Volts
0.8
T
20
J
- Volts
= 150ºC
6.0
- 40ºC
25ºC
0.9
T
J
= 25ºC
25
6.5
1.0
C oss
C isss
C rss
1.1
30
7.0
1.2
35
7.5
1.3
8.0
1.4
40
1,000
140
120
100
100
80
60
40
20
10
10
0
9
8
7
6
5
4
3
2
1
0
1
0
0
1
T
T
Single Pulse
V
I
I
J
C
20
External Lead Limit
D
G
20
DS
R
= 175ºC
= 25ºC
= 125A
= 10mA
DS(on)
= 50V
Fig. 12. Forward-Bias Safe Operating Area
40
Limit
40
60
Fig. 8. Transconductance
60
10
Fig. 10. Gate Charge
80
80
Q
T
J
I
G
D
V
= - 40ºC
100
- NanoCoulombs
DS
- Amperes
100
- Volts
120
25ºC
120
IXFK250N10P
150ºC
IXFX250N10P
140
100
140
25µs
100µs
1ms
10ms
100ms
DC
160
160
180
180
200
1000
220
200