IXTN5N250 IXYS, IXTN5N250 Datasheet - Page 4

• Manufacturer Part Number: IXTN5N250
• Description: High Voltage Power MOSFETs (>1200V)
• Manufacturer: IXYS

Specifications of IXTN5N250

• Vdss, Max, (v): 2500
• Id(cont), Tc=25°c, (a): 5
• Rds(on), Max, Tj=25°c, (?): 8.8
• Ciss, Typ, (pf): 8560
• Qg, Typ, (nc): 200
• Trr, Typ, (ns): 1200
• Pd, (w): 700
• Rthjc, Max, (k/w): 0.18
• Package Style: SOT-227

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100
0.1
10
10
1
8
6
4
2
0
8
7
6
5
4
3
2
1
0
100
0
0
T
T
Single Pulse
V
I
I
J
C
D
G
DS
= 150ºC
20
= 25ºC
= 2.5A
= 10mA
0.5
R
= 1000V
DS(on)
Fig. 11. Forward-Bias Safe Operating Area
40
Limit
1
60
Fig. 7. Transconductance
1.5
Fig. 9. Gate Charge
80
Q
I
D
G
@ T
V
- Amperes
- NanoCoulombs
DS
100
2
1,000
C
- Volts
= 25ºC
120
2.5
DC
140
T
J
= - 40ºC
3
125ºC
25ºC
100µs
1ms
10ms
100ms
160
3.5
180
4
200
10,000
220
4.5
100,000
10,000
1,000
100
100
0.1
16
14
12
10
10
10
8
6
4
2
0
1
0.2
100
0
T
T
Single Pulse
f
J
C
0.3
= 1 MHz
= 150ºC
= 75ºC
Fig. 8. Forward Voltage Drop of Intrinsic Diode
R
DS(on)
5
Fig. 12. Forward-Bias Safe Operating Area
0.4
Limit
10
0.5
Fig. 10. Capacitance
0.6
15
T
V
V
J
@ T
SD
= 125ºC
DS
V
DS
0.7
- Volts
- Volts
1,000
C
- Volts
20
= 75ºC
0.8
DC
T
IXTN5N250
J
25
0.9
= 25ºC
C oss
C iss
C rss
25µs
100µs
1ms
10ms
100ms
1.0
30
1.1
35
1.2
10,000
1.3
40