IXTF1N250 IXYS, IXTF1N250 Datasheet - Page 2

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IXTF1N250

Manufacturer Part Number
IXTF1N250
Description
High Voltage Power MOSFETs (>1200V)
Manufacturer
IXYS
Datasheet

Specifications of IXTF1N250

Vdss, Max, (v)
2500
Id(cont), Tc=25°c, (a)
1
Rds(on), Max, Tj=25°c, (?)
40
Ciss, Typ, (pf)
1660
Qg, Typ, (nc)
41
Trr, Typ, (ns)
2.5
Pd, (w)
110
Rthjc, Max, (k/w)
1.13
Package Style
ISOPLUS i4-Pak
Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
(T
I
I
V
t
Notes
IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents: 4,850,072
S
SM
d(on)
r
d(off)
f
rr
fs
SD
iss
oss
rss
thJC
thCS
g(on)
gs
gd
J
J
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
= 25°C, Unless Otherwise Specified)
= 25°C, Unless Otherwise Specified)
2. Device must be heatsunk for high-temp I
1. Pulse test, t ≤ 300µs, duty cycle, d ≤ 2%.
measurement to avoid thermal runaway.
V
V
Resistive Switching Times
V
R
V
V
Repetitive, pulse width limited by T
I
I
Test Conditions
Test Conditions
F
F
GS
DS
GS
G
GS
GS
= 1A, V
= 1A, -di/dt = 100A/µs, V
= 5Ω (External)
= 50V, I
= 0V, V
= 10V, V
= 10V, V
= 0V
ADVANCE TECHNICAL INFORMATION
GS
DS
D
DS
DS
= 0V, Note 1
= 0.5 • I
= 25V, f = 1MHz
= 0.5 • V
= 600V, I
4,835,592
4,881,106
D25
, Note 1
DSS
D
4,931,844
5,017,508
5,034,796
= 0.5 • I
, I
R
D
= 200V
= I
D25
D25
5,049,961
5,063,307
5,187,117
JM
DSS
5,237,481
5,381,025
5,486,715
Characteristic Values
Min.
1.0
Characteristic Values
Min.
6,162,665
6,259,123 B1
6,306,728 B1
1660
Typ.
0.21
132
1.8
Typ.
77
23
69
25
39
41
16
2.5
8
1.13 °C/W
Max.
6,404,065 B1
6,534,343
6,583,505
Max.
1.5
1.5
6
°C/W
mS
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
µs
A
A
V
6,683,344
6,710,405 B2 6,759,692
6,710,463
ISOPLUS i4-Pak
6,727,585
6,771,478 B2 7,071,537
IXTF1N250
7,005,734 B2
7,063,975 B2
Pin 1 = Gate
Pin 2 = Source
Pin 3 = Drain
Tab 4 = Isolated
TM
(HV) Outline
7,157,338B2

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