IXTT12N150 IXYS, IXTT12N150 Datasheet - Page 3

• Manufacturer Part Number: IXTT12N150
• Description: High Voltage Power MOSFETs (>1200V)
• Manufacturer: IXYS

Specifications of IXTT12N150

• Vdss, Max, (v): 1500
• Id(cont), Tc=25°c, (a): 12
• Rds(on), Max, Tj=25°c, (?): 2.0
• Ciss, Typ, (pf): 3720
• Qg, Typ, (nc): 106
• Trr, Typ, (ns): 1200
• Pd, (w): 890
• Rthjc, Max, (k/w): 0.14
• Package Style: TO-268

© 2011 IXYS CORPORATION, All Rights Reserved
3.4
3.0
2.6
2.2
1.8
1.4
1.0
0.6
0.2
14
12
10
14
12
10
8
6
4
2
0
8
6
4
2
0
-50
-50
0
V
GS
-25
= 10V
-25
Fig. 3. R
Fig. 1. Output Characteristics @ T
5
Fig. 5. Maximum Drain Current vs.
0
0
DS(on)
10
Junction Temperature
T
T
Case Temperature
C
Normalized to I
J
25
25
- Degrees Centigrade
- Degrees Centigrade
V
DS
15
- Volts
50
50
75
75
D
V
GS
20
= 6A Value vs.
I
D
= 10V
5.5V
= 12A
7V
6V
5V
100
J
100
= 25ºC
I
D
25
= 6A
125
125
150
150
30
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
14
12
10
8
6
4
2
0
8
7
6
5
4
3
2
1
0
3.0
0
0
V
GS
= 10V
Fig. 4. R
3.5
Fig. 2. Output Characteristics @ T
2
5
DS(on)
4
4.0
Fig. 6. Input Admittance
10
Normalized to I
Drain Current
6
4.5
I
D
V
V
- Amperes
GS
DS
15
T
J
- Volts
- Volts
= 125ºC
- 40ºC
8
25ºC
5.0
20
D
T
= 6A Value vs.
10
IXTH12N150
J
IXTT12N150
= 125ºC
5.5
J
T
V
J
= 125ºC
GS
= 25ºC
25
12
= 10V
6V
4V
6.0
5V
14
30
6.5