IXTJ4N150 IXYS, IXTJ4N150 Datasheet - Page 4

• Manufacturer Part Number: IXTJ4N150
• Description: High Voltage Power MOSFETs (>1200V)
• Manufacturer: IXYS

Specifications of IXTJ4N150

• Vdss, Max, (v): 1500
• Id(cont), Tc=25°c, (a): 2.5
• Rds(on), Max, Tj=25°c, (?): 6
• Ciss, Typ, (pf): 1576
• Qg, Typ, (nc): 44.5
• Trr, Typ, (ns): 900
• Pd, (w): 110
• Rthjc, Max, (k/w): 1.13
• Package Style: ISO TO-247

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
0.01
0.1
10
10
0.00001
9
8
7
6
5
4
3
2
1
0
8
6
4
2
0
1
0
0
V
I
I
D
G
Fig. 11. Maximum Transient Thermal Impedance
DS
0.5
= 2A
= 10mA
5
= 750V
0.0001
10
1
Fig. 7. Transconductance
0.001
1.5
15
Fig. 9. Gate Charge
Pulse Width - Seconds
Q
G
- NanoCoulombs
I
D
20
2
- Amperes
0.01
2.5
25
T
J
= - 40ºC
30
0.1
3
25ºC
125ºC
3.5
35
1
40
4
4.5
45
10
10,000
1,000
0.01
100
100
0.1
14
12
10
10
10
8
6
4
2
0
1
0.4
10
0
f
= 1 MHz
Fig. 8. Forward Voltage Drop of Intrinsic Diode
5
R
Fig. 12. Forward-Bias Safe Operating Area
0.5
DS(on)
Limit
10
100
0.6
Fig. 10. Capacitance
T
15
J
= 125ºC
V
V
DS
V
SD
DS
0.7
20
- Volts
- Volts
- Volts
C rss
C iss
C oss
IXTJ4N150
25
1,000
0.8
T
J
30
25µs
100µs
1ms
10ms
100ms
DC
= 25ºC
IXYS REF: T_4N150 (4A)02-23-12-B
T
T
Single Pulse
0.9
J
C
= 150ºC
= 25ºC
35
10,000
40
1.0