IXTP02N120P IXYS, IXTP02N120P Datasheet - Page 4

• Manufacturer Part Number: IXTP02N120P
• Manufacturer: IXYS

Specifications of IXTP02N120P

• Vdss, Max, (v): 1200
• Id(cont), Tc=25°c, (a): 0.2
• Rds(on), Max, Tj=25°c, (?): 75
• Ciss, Typ, (pf): 104
• Qg, Typ, (nc): 4.7
• Trr, Typ, (ns): 1600
• Pd, (w): 33
• Rthjc, Max, (k/w): 3.8
• Package Style: TO-220

IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.
1,000
800
700
600
500
400
300
200
100
100
350
300
250
200
150
100
50
10
0
1
0
0.3
2.0
0
f
= 1 MHz
5
2.5
0.4
Fig. 9. Forward Voltage Drop of
10
3.0
Fig. 7. Input Admittance
0.5
Fig. 11. Capacitance
15
Intrinsic Diode
V
V
T
3.5
GS
SD
T
J
V
J
= 125ºC
DS
= 125ºC
- Volts
- Volts
- 40ºC
25ºC
0.6
20
- Volts
C rss
C iss
C oss
4.0
25
0.7
4.5
30
0.8
5.0
T
J
35
= 25ºC
5.5
0.9
40
10.0
400
350
300
250
200
150
100
1.0
0.1
50
10
0.00001
0
9
8
7
6
5
4
3
2
1
0
0.0
0
V
I
I
0.5
Fig. 12. Maximum Transient Thermal Impedance
D
G
DS
= 100mA
= 1mA
50
0.0001
= 600V
1.0
100
1.5
Fig. 8. Transconductance
0.001
Fig. 10. Gate Charge
Q
Pulse Width - Seconds
G
I
D
- NanoCoulombs
2.0
- MilliAmperes
150
0.01
2.5
200
3.0
IXTY02N120P
IXTP02N120P
0.1
3.5
250
T
J
125ºC
= - 40ºC
25ºC
4.0
IXYS REF: T_02N120P(F2)10-01-09
1
300
4.5
350
5.0
10