IXTM5N100A IXYS, IXTM5N100A Datasheet - Page 3

• Manufacturer Part Number: IXTM5N100A
• Description: High Voltage Power MOSFETs (>1200V)
• Manufacturer: IXYS

Specifications of IXTM5N100A

• Vdss, Max, (v): 1000
• Id(cont), Tc=25°c, (a): 5
• Rds(on), Max, Tj=25°c, (?): 2
• Ciss, Typ, (pf): 2600
• Qg, Typ, (nc): 88
• Trr, Typ, (ns): 900
• Pd, (w): 180
• Rthjc, Max, (k/w): 0.7
• Package Style: TO-204

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3.0
2.8
2.6
2.4
2.2
2.0
1.8
9
8
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
-50
0
0
Fig. 1 Output Characteristics
Fig. 3 R
Fig. 5 Drain Current vs.
T
-25
T
J
= 25°C
J
= 25°C
5
2
Case Temperature
DS(on)
0
10
T
vs. Drain Current
4
25
I
C
V
D
V
GS
- Degrees C
- Amperes
DS
= 10V
V
15
- Volts
50
GS
6
= 10V
V
GS
5N100
75
= 15V
20
100 125 150
8
5N100A
25
7V
6V
10
30
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
9
8
7
6
5
4
3
2
1
0
-50
-50
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5
Fig. 4 Temperature Dependence
Fig. 2 Input Admittance
Fig. 6 Temperature Dependence of
IXTH 5 N100
IXTM 5 N100
-25
-25
V
GS(th)
of Drain to Source Resistance
Breakdown and Threshold Voltage
0
0
T
T
T
25
25
J
J
J
V
I
D
= 25°C
- Degrees C
- Degrees C
GS
= 2.5A
50
50
- Volts
75
75
IXTH 5 N100A
IXTM 5 N100A
100 125 150
100 125 150
BV
DSS
3 - 4