IXTP05N100P IXYS, IXTP05N100P Datasheet - Page 4

• Manufacturer Part Number: IXTP05N100P
• Manufacturer: IXYS

Specifications of IXTP05N100P

• Vdss, Max, (v): 1000
• Id(cont), Tc=25°c, (a): 0.5
• Rds(on), Max, Tj=25°c, (?): 30
• Ciss, Typ, (pf): 196
• Qg, Typ, (nc): 8.1
• Trr, Typ, (ns): 750
• Pd, (w): 50
• Rthjc, Max, (k/w): 2.5
• Package Style: TO-220

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
1,000
100
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
10
1
2
1
0
0
0.4
2.5
0
f
= 1 MHz
Fig. 9. Forward Voltage Drop of Intrinsic Diode
5
3.0
0.5
10
3.5
Fig. 7. Input Admittance
Fig. 11. Capacitance
T
15
J
0.6
= 125ºC
V
V
V
SD
DS
4.0
GS
- Volts
- Volts
- Volts
T
20
J
= 125ºC
- 40ºC
4.5
25ºC
0.7
25
C oss
C iss
C rss
5.0
30
0.8
T
5.5
J
35
= 25ºC
0.9
6.0
40
0.01
0.1
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
10
10
9
8
7
6
5
4
3
2
1
0
1
0
10
0
0
V
I
I
T
T
Single Pulse
D
G
DS
J
C
= 0.25A
= 1mA
= 150ºC
= 25ºC
1
= 500V
0.1
Fig. 12. Forward-Bias Safe Operating Area
R
DS(on)
2
0.2
Limit
Fig. 8. Transconductance
3
Fig. 10. Gate Charge
0.3
V
Q
I
DS
D
G
- Amperes
- NanoCoulombs
- Volts
4
100
0.4
T
J
= - 40ºC
5
IXTA05N100P
IXTP05N100P
25ºC
125ºC
0.5
6
0.6
7
DC
0.7
8
1000
100µs
1ms
10ms
0.8
9