IXTQ69N30PM IXYS, IXTQ69N30PM Datasheet - Page 4

• Manufacturer Part Number: IXTQ69N30PM
• Manufacturer: IXYS

Specifications of IXTQ69N30PM

• Vdss, Max, (v): 300
• Id(cont), Tc=25°c, (a): 25
• Rds(on), Max, Tj=25°c, (?): 0.049
• Ciss, Typ, (pf): 4960
• Qg, Typ, (nc): 156
• Trr, Typ, (ns): 250
• Pd, (w): 90
• Rthjc, Max, (k/w): 1.38
• Package Style: OVERMOLDED

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
200
180
160
140
120
100
100
80
60
40
20
90
80
70
60
50
40
30
20
10
0
0
0.4
3.0
0
f
= 1 MHz
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0.5
3.5
5
0.6
4.0
10
T
J
Fig. 7. Input Admittance
= 125ºC
0.7
Fig. 11. Capacitance
4.5
15
V
V
V
SD
DS
GS
0.8
- Volts
- Volts
- Volts
5.0
20
T
T
J
J
= 125ºC
0.9
= 25ºC
- 40ºC
25ºC
5.5
25
C iss
C oss
C rss
1.0
6.0
30
1.1
6.5
35
1.2
7.0
1.3
40
1,000.0
100.0
10.0
80
70
60
50
40
30
20
10
10
1.0
0.1
0
9
8
7
6
5
4
3
2
1
0
0
0
1
V
I
I
T
T
Single Pulse
D
G
R
DS
J
C
DS(on)
10
= 34.5A
= 10mA
= 150ºC
= 25ºC
20
= 150V
Fig. 12. Forward-Bias Safe Operating Area
Limit
20
40
Fig. 8. Transconductance
30
10
Fig. 10. Gate Charge
Q
G
60
- NanoCoulombs
I
D
- Amperes
V
40
IXTQ69N30PM
DS
- Volts
80
50
100
100
60
T
J
= - 40ºC
120
125ºC
25ºC
70
DC
25µs
100µs
1ms
10ms
100ms
140
80
1,000
160
90