SKiM306GD12E4 SEMIKRON, SKiM306GD12E4 Datasheet - Page 2

• Manufacturer Part Number: SKiM306GD12E4
• Manufacturer: SEMIKRON

Specifications of SKiM306GD12E4

• Family/system: SKiM 63\/93
• Voltage (v): 1200
• Current (a): 300
• Chip-type: IGBT 4 (Trench)
• Case: SKIM 63

SKiM306GD12E4
Trench IGBT Modules
SKiM306GD12E4
Features
• IGBT 4 Trench Gate Technology
• Solderless sinter technology
• V
• Low inductance case
• Isolated by Al
• Pressure contact technology for
• High short circuit capability, self limiting
• Integrated temperature sensor
Typical Applications*
• Automotive inverter
• High reliability AC inverter wind
• High reliability AC inverter drives
2
SKiM
coefficient
Bonded) ceramic substrate
thermal contacts and electrical
contacts
to 6 x I
CE(sat)
C
with positive temperature
®
63
2
O
3
GD
DCB (Direct Copper
Characteristics
Symbol
Inverse diode
V
V
r
I
Q
E
R
Module
L
R
w
Temperature sensor
R
B
RRM
F
CE
F
F0
rr
th(j-s)
CC'+EE'
100
100/125
rr
= V
EC
Rev. 3 – 14.07.2011
I
V
chip
I
di/dt
V
V
terminal-chip
Conditions
per diode
T
R
T[K];
F
F
GE
GE
CC
Sensor
(T)
= 300 A
= 300 A
= 0 V
off
= -15 V
= 600 V
= R
= 8000 A/µs
= 100 °C (R
100
exp[B
100/125
25
T
T
T
T
T
T
T
T
T
T
T
= 5 k)
j
j
j
j
j
j
j
j
j
s
s
(1/T-1/373)];
= 25 °C
= 150 °C
= 25 °C
= 150 °C
= 25 °C
= 150 °C
= 150 °C
= 150 °C
= 150 °C
= 25 °C
= 125 °C
min.
1.1
0.7
2.2
3.3
4096
typ.
448
761
339
2.1
2.1
1.3
0.9
2.8
3.9
0.3
0.5
47
21
9
© by SEMIKRON
max.
0.218
2.5
2.4
1.5
1.1
3.2
4.3
13
Unit
K/W
m
m
m
m
µC
mJ
nH

V
V
V
V
A
K
g