SEMiX353GD126HDc SEMIKRON, SEMiX353GD126HDc Datasheet

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SEMiX353GD126HDc

Manufacturer Part Number
SEMiX353GD126HDc
Description
Manufacturer
SEMIKRON
Datasheet

Specifications of SEMiX353GD126HDc

Family/system
SEMiX
Voltage (v)
1200
Current (a)
225
Chip-type
IGBT 3 (Trench)
Case
SEMiX 33c

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SEMIX353GD126HDC
Manufacturer:
Semikron
Quantity:
1 000
SEMiX353GD126HDc
Trench IGBT Modules
SEMiX353GD126HDc
Features
• Homogeneous Si
• Trench = Trenchgate technology
• V
• High short circuit capability
• UL recognised file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Electronic Welding
Remarks
• Case temperatur limited to T
• Not for new design
© by SEMIKRON
SEMiX
coefficient
max.
CE(sat)
with positive temperature
®
33c
GD
C
=125°C
Absolute Maximum Ratings
Symbol
IGBT
V
I
I
I
V
t
T
Inverse diode
I
I
I
I
T
Module
I
T
V
Characteristics
Symbol
IGBT
V
V
r
V
I
C
C
C
Q
R
t
t
E
t
t
E
R
C
Cnom
CRM
psc
F
Fnom
FRM
FSM
t(RMS)
CE
CES
d(on)
r
d(off)
f
j
j
stg
CES
GES
isol
CE(sat)
CE0
GE(th)
on
off
ies
oes
res
Gint
th(j-c)
G
Rev. 0 – 16.04.2010
T
V
V
V
T
t
I
V
chiplevel
V
V
V
V
V
V
T
V
I
R
R
Conditions
I
I
AC sinus 50Hz, t = 1 min
Conditions
V
per IGBT
p
C
C
CRM
FRM
j
j
j
CC
GE
CES
GE
GE
GE
CE
CE
GE
GE
CC
GE
G on
G off
= 10 ms, sin 180°, T
= 150 °C
= 150 °C
= 225 A
= 25 °C
= 225 A
=V
= 1200 V
= 25 V
= 600 V
≤ 20 V
= 15 V
= 15 V
= 0 V
= 0 V
= - 8 V...+ 15 V
= 600 V
= 2xI
= 2xI
≤ 1200 V
= 2 Ω
= 2 Ω
CE
, I
Fnom
Cnom
C
= 9 mA
T
T
T
T
T
T
T
T
T
T
T
T
T
f = 1 MHz
f = 1 MHz
f = 1 MHz
T
T
T
T
T
T
c
c
j
c
c
j
j
j
j
j
j
j
j
j
j
j
j
j
j
= 125 °C
j
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 125 °C
= 125 °C
= 125 °C
= 125 °C
= 125 °C
= 125 °C
= 25 °C
= 80 °C
= 25 °C
= 80 °C
= 25 °C
min.
5
-40 ... 150
-40 ... 150
-40 ... 125
-20 ... 20
Values
1200
1700
4000
1800
typ.
16.0
0.84
0.73
3.33
26.5
32.5
364
256
225
450
329
228
225
450
600
265
585
120
1.7
0.9
3.1
4.9
5.8
0.1
10
55
2
1
max.
2.45
2.1
1.2
1.1
4.0
6.0
6.5
0.3
0.1
Unit
Unit
K/W
mΩ
mΩ
mA
mA
nC
mJ
mJ
°C
°C
°C
nF
nF
nF
µs
ns
ns
ns
ns
V
A
A
A
A
V
A
A
A
A
A
A
V
V
V
V
V
V
1

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SEMiX353GD126HDc Summary of contents

Page 1

... SEMiX353GD126HDc ® SEMiX 33c Trench IGBT Modules SEMiX353GD126HDc Features • Homogeneous Si • Trench = Trenchgate technology • V with positive temperature CE(sat) coefficient • High short circuit capability • UL recognised file no. E63532 Typical Applications* • AC inverter drives • UPS • Electronic Welding Remarks • ...

Page 2

... SEMiX353GD126HDc ® SEMiX 33c Trench IGBT Modules SEMiX353GD126HDc Features • Homogeneous Si • Trench = Trenchgate technology • V with positive temperature CE(sat) coefficient • High short circuit capability • UL recognised file no. E63532 Typical Applications* • AC inverter drives • UPS • Electronic Welding Remarks • ...

Page 3

... SEMiX353GD126HDc Fig. 1: Typ. output characteristic, inclusive R Fig. 3: Typ. turn-on /-off energy = f (I Fig. 5: Typ. transfer characteristic © by SEMIKRON Fig. 2: Rated current vs. temperature I CC'+ EE' ) Fig. 4: Typ. turn-on /-off energy = Fig. 6: Typ. gate charge characteristic Rev. 0 – 16.04.2010 = ...

Page 4

... SEMiX353GD126HDc Fig. 7: Typ. switching times vs. I Fig. 9: Typ. transient thermal impedance Fig. 11: Typ. CAL diode peak reverse recovery current 4 Fig. 8: Typ. switching times vs. gate resistor R C Fig. 10: Typ. CAL diode forward charact., incl. R Fig. 12: Typ. CAL diode recovery charge Rev. 0 – 16.04.2010 ...

Page 5

... SEMiX353GD126HDc SEMiX 33c pinout This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. © ...

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