SEMiX653GD176HDc SEMIKRON, SEMiX653GD176HDc Datasheet

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... SEMiX653GD176HDc ® SEMiX 33c Trench IGBT Modules SEMiX653GD176HDc Features • Homogeneous Si • Trench = Trenchgate technology • V with positive temperature CE(sat) coefficient • UL recognised file no. E63532 Typical Applications* • AC inverter drives • UPS • Electronic welders GD © by SEMIKRON Absolute Maximum Ratings Symbol ...

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... SEMiX653GD176HDc ® SEMiX 33c Trench IGBT Modules SEMiX653GD176HDc Features • Homogeneous Si • Trench = Trenchgate technology • V with positive temperature CE(sat) coefficient • UL recognised file no. E63532 Typical Applications* • AC inverter drives • UPS • Electronic welders GD 2 Characteristics Symbol Conditions Inverse diode ...

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... SEMiX653GD176HDc Fig. 1: Typ. output characteristic, inclusive R Fig. 3: Typ. turn-on /-off energy = f (I Fig. 5: Typ. transfer characteristic © by SEMIKRON Fig. 2: Rated current vs. temperature I CC'+ EE' ) Fig. 4: Typ. turn-on /-off energy = Fig. 6: Typ. gate charge characteristic Rev. 1 – 24.06.2010 = ...

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... SEMiX653GD176HDc Fig. 7: Typ. switching times vs. I Fig. 9: Typ. transient thermal impedance Fig. 11: Typ. CAL diode peak reverse recovery current 4 Fig. 8: Typ. switching times vs. gate resistor R C Fig. 10: Typ. CAL diode forward charact., incl. R Fig. 12: Typ. CAL diode recovery charge Rev. 1 – 24.06.2010 ...

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... SEMiX653GD176HDc SEMiX 33c pinout This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. © ...