IRF840S Advanced Power Electronics Corp., IRF840S Datasheet
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IRF840S
Specifications of IRF840S
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IRF840S Summary of contents
Page 1
... Thermal Data Symbol Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maixmum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET G Parameter @ 10V GS @ 10V Parameter IRF840S RoHS-compliant Product BV 500V D DSS R 0.85Ω DS(ON TO-263(S) S Rating Units ...
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... IRF840S Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...
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... I =4. =10V -50 150 o C) Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.4 1 0.8 0.6 0.4 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. IRF840S 10V . Drain-to-Source Voltage ( 100 Junction Temperature ( 100 ...
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... IRF840S =100V DS V =250V =400V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 = Single Pulse 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 ...