AP3989I Advanced Power Electronics Corp., AP3989I Datasheet - Page 3

• Manufacturer Part Number: AP3989I
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP3989I

• Vds: 600V
• Vgs: ±30V
• Rds(on) / Max(m?) Vgs@10v: 680
• Qg (nc): 48
• Qgs (nc): 10
• Qgd (nc): 20
• Id(a): 10
• Pd(w): 39
• Configuration: Single N
• Package: TO-220CFM

1.2
1.1
0.9
0.8
20
16
12
10
8
4
0
1
8
6
4
2
0
0.0
-50
0
Fig 1. Typical Output Characteristics
Fig 3. Normalized BV
T
Fig 5. Forward Characteristic of
C
=25
4.0
V
0.2
o
Temperature
T
Reverse Diode
C
DS
j
V
, Junction Temperature (
, Drain-to-Source Voltage (V)
0
SD
T
, Source-to-Drain Voltage (V)
8.0
j
0.4
=150
o
C
12.0
0.6
50
DSS
16.0
0.8
v.s. Junction
V
100
o
T
C)
G
20.0
j
= 4 . 0V
=25
1
6.0 V
10 V
7.0 V
5.0V
o
C
24.0
1.2
150
2.8
2.4
2.0
1.6
1.2
0.8
0.4
1.5
1.3
1.1
0.9
0.7
0.5
10
8
6
4
2
0
Fig 4. Normalized On-Resistance
0.0
-50
-50
Fig 2. Typical Output Characteristics
Fig 6. Gate Threshold Voltage v.s.
T
V
C
I
G
=150
D
=10V
4.0
=5A
v.s. Junction Temperature
V
o
T
Junction Temperature
DS
C
T
j
0
0
j
, Junction Temperature (
, Drain-to-Source Voltage (V)
8.0
, Junction Temperature (
12.0
50
50
16.0
AP3989I-HF
20.0
100
100
o
o
C )
V
C)
G
24.0
= 4.0V
7.0 V
6.0 V
5.0V
1 0 V
28.0
150
150
3