AP3986I Advanced Power Electronics Corp., AP3986I Datasheet
AP3986I
Specifications of AP3986I
Related parts for AP3986I
AP3986I Summary of contents
Page 1
... Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V AP3986I RoHS-compliant Product BV 620V DSS R 1.3Ω DS(ON TO-220CFM(I) Rating Units 620 ...
Page 2
... AP3986I Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...
Page 3
... Fig 2. Typical Output Characteristics 3 I =2. =10V 150 - Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 1.4 1.2 1 0.8 0.6 0.4 1.3 1.5 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP3986I o 10V C 7.0V 6.0V V =5. Drain-to-Source Voltage ( 100 150 Junction Temperature ( 100 150 o ...
Page 4
... AP3986I =300V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Operation in this 10 area limited by R DS(ON Single Pulse 0. Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% ...