AP2761I-A Advanced Power Electronics Corp., AP2761I-A Datasheet
AP2761I-A
Specifications of AP2761I-A
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AP2761I-A Summary of contents
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... Parameter Rthj-c Thermal Resistance Junction-case Rthj-a Thermal Resistance Junction-ambient Data & specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V AP2761I-A RoHS-compliant Product BV 650V DSS R 1Ω DS(ON) I 10A TO-220CFM(I) Rating Units 650 ± ...
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... AP2761I-A Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...
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... V =4. Fig 2. Typical Output Characteristics 150 - Fig 4. Normalized On-Resistance 1.3 1.5 -50 Fig 6. Gate Threshold Voltage v.s. AP2761I-A o 10V C 5.0V 4.5V V =4. Drain-to-Source Voltage (V) DS =5A D =10V 100 150 Junction Temperature ( v.s. Junction Temperature ...
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... AP2761I =10A D V =330V =410V DS V =520V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 = Single Pulse 0 100 V , Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 ...