AP13N50W-HF Advanced Power Electronics Corp., AP13N50W-HF Datasheet - Page 4

• Manufacturer Part Number: AP13N50W-HF
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP13N50W-HF

• Vds: 500V
• Vgs: ±30V
• Rds(on) / Max(m?) Vgs@10v: 520
• Qg (nc): 48
• Qgs (nc): 9
• Qgd (nc): 18
• Id(a): 14
• Configuration: Single N
• Package: TO-3P

AP13N50W
100
10
1
0
12
10
8
6
4
2
0
1
0
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
Fig 7. Gate Charge Characteristics
Single Pulse
T
I
V
Operation in this area
10%
90%
limited by R
V
D
C
V
DS
=14A
GS
=25
DS
=200V
V
10
DS(ON)
o
DS
C
Q
t
,Drain-to-Source Voltage (V)
d(on)
G
10
, Total Gate Charge (nC)
20
t
r
30
100
40
t
d(off)
t
50
f
100ms
100us
10ms
1ms
DC
1000
60
Fig 10. Effective Transient Thermal Impedance
3200
2400
1600
800
0.01
0.1
0
0.00001
1
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
10V
Duty factor = 0.5
0.1
0.02
Single Pulse
V
0.05
0.2
0.01
G
5
0.0001
Q
V
GS
9
DS
,Drain-to-Source Voltage (V)
t , Pulse Width (s)
13
0.001
Q
Q
Charge
G
GD
17
0.01
21
P
DM
Duty Factor = t/T
Peak T
j
25
= P
t
DM
0.1
f=1.0MHz
T
x R
thjc
29
+ T
Q
C
C
C
C
iss
oss
rss
1
33
4