AP09N70P-H-LF Advanced Power Electronics Corp., AP09N70P-H-LF Datasheet - Page 4

• Manufacturer Part Number: AP09N70P-H-LF
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP09N70P-H-LF

• Vds: 700V
• Vgs: ±30V
• Rds(on) / Max(m?) Vgs@10v: 850
• Qg (nc): 44
• Qgs (nc): 11
• Qgd (nc): 12
• Id(a): 8.3
• Pd(w): 156
• Configuration: Single N
• Package: TO-220

AP09N70P/R-H
100
0.1
10
16
12
8
4
0
1
0
1
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
10%
Operation in this
90%
area limited by
V
Single Pulse
V
I
T
R
GS
D
DS(ON)
DS
c
=9A
=25
V
o
C
10
DS
Q
t
d(on)
G
V
, Drain-to-Source Voltage (V)
V
V
20
DS
, Total Gate Charge (nC)
DS
DS
=320V
t
=400V
r
=480V
100
40
t
d(off)
100ms
100us
10ms
1000
1ms
DC
t
f
10000
60
Fig 10. Effective Transient Thermal Impedance
10000
100
0.01
0.1
0.00001
1
1
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
10V
0.02
0.05
0.01
V
0.2
0.1
Duty factor=0.5
Single Pulse
G
5
0.0001
V
Q
DS
GS
9
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
0.001
Q
Q
13
Charge
G
GD
17
0.01
P
DM
Duty factor = t/T
Peak T
21
j
= P
t
DM
0.1
T
f=1.0MHz
x R
thjc
25
+ T
C
C
C
Q
C
iss
oss
rss
1
29
4/4