AP09N70I-A-HF Advanced Power Electronics Corp., AP09N70I-A-HF Datasheet - Page 3

• Manufacturer Part Number: AP09N70I-A-HF
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP09N70I-A-HF

• Vds: 650V
• Vgs: ±30V
• Rds(on) / Max(m?) Vgs@10v: 750
• Qg (nc): 44
• Qgs (nc): 11
• Qgd (nc): 12
• Id(a): 9
• Pd(w): 42
• Configuration: Single N
• Package: TO-220CFM

100
0.1
1.2
1.1
0.9
0.8
10
10
1
1
8
6
4
2
0
-50
0
0
Fig 1. Typical Output Characteristics
Fig 3. Normalized BV
Fig 5. Forward Characteristic of
T
T
0.2
C
j
=25
Temperature
= 150
V
V
Reverse Diode
DS
T
SD
o
3
0
C
j
0.4
, Drain-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
, Junction Temperature (
o
C
0.6
50
6
0.8
DSS
T
j
v.s. Junction
1
= 25
100
9
V
o
G
C)
o
=3.5V
C
1.2
10V
6.0V
5.0V
4.5V
4.0V
150
1.4
12
10
8
6
4
2
0
3
2
1
0
5
4
3
2
1
-50
-50
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
I
V
T
D
G
=4.5A
C
=10V
=150
V
4
DS
v.s. Junction Temperature
Junction Temperature
T
T
, Drain-to-Source Voltage (V)
o
0
0
j
j
C
, Junction Temperature (
, Junction Temperature (
8
AP09N70I-A-HF
12
50
50
16
100
100
o
o
C )
V
C)
G
20
=3.5V
10V
6.0V
5.0V
4.5V
4.0V
150
24
150
3