IRF630 Advanced Power Electronics Corp., IRF630 Datasheet - Page 4

• Manufacturer Part Number: IRF630
• Description: APEC MOSFET provide the power designer with the best combination of fast switching , lower on-resistance and reasonable cost
• Manufacturer: Advanced Power Electronics Corp.

Specifications of IRF630

• Vds: 200V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 400
• Qg (nc): 25
• Qgs (nc): 4
• Qgd (nc): 14
• Id(a): 9
• Pd(w): 74
• Configuration: Single N
• Package: TO-220

IRF630
100
0.1
12
10
10
8
6
4
2
0
1
0
1
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
10%
90%
V
V
I
GS
Single Pulse
DS
D
T
=5.9A
c
=25
V
Q
DS
t
o
G
d(on)
C
, Drain-to-Source Voltage (V)
, Total Gate Charge (nC)
V
10
10
V
DS
V
t
DS
r
=40V
DS
=100V
=160V
100
20
t
d(off)
t
100m
100us
10ms
DC
f
1ms
1s
1000
30
Fig 10. Effective Transient Thermal Impedance
1000
0.01
10
0.1
0.00001
1
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
10V
V
0.02
0.01
Single Pulse
Duty factor=0.5
0.05
0.2
0.1
G
5
0.0001
V
Q
DS
GS
9
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
0.001
Q
Q
13
Charge
G
GD
17
0.01
P
DM
Duty factor = t/T
Peak T
21
j
= P
t
DM
0.1
T
f=1.0MHz
x R
thjc
25
+ T
C
C
C
Q
C
iss
oss
rss
1
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