AP730P Advanced Power Electronics Corp., AP730P Datasheet - Page 5

• Manufacturer Part Number: AP730P
• Description: The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching ,ruggedized device design , low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP730P

• Vds: 400V
• Vgs: ±30V
• Rds(on) / Max(m?) Vgs@10v: 1000
• Qg (nc): 35
• Qgs (nc): 3.7
• Qgd (nc): 20
• Id(a): 5.5
• Pd(w): 74
• Configuration: Single N
• Package: TO-220

0.01
100
0.1
10
16
14
12
10
1
8
6
4
2
0
0.1
0
I
Fig 9. Gate Charge Characteristics
Fig 11. Forward Characteristic of
D
=5.5A
5
T
0.3
j
= 150
10
Q
Reverse Diode
0.5
G
o
15
C
, Total Gate Charge (nC)
V
V
DS
0.7
DS
V
20
=80V
=120V
DS
V
SD
=160V
25
0.9
(V)
T
j
= 25
30
1.1
o
35
C
1.3
40
45
1.5
50
10000
100
Fig 10. Typical Capacitance Characteristics
3.6
3.1
2.6
2.1
1.6
1
-50
1
Fig 12. Gate Threshold Voltage v.s.
T
Junction Temperature
j
0
11
, Junction Temperature (
V
DS
50
21
(V)
o
100
C )
31
AP730P
Ciss
Coss
f=1.0MHz
Crss
150