AP50T10GI-HF Advanced Power Electronics Corp., AP50T10GI-HF Datasheet
AP50T10GI-HF
Specifications of AP50T10GI-HF
Related parts for AP50T10GI-HF
AP50T10GI-HF Summary of contents
Page 1
... Symbol Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice G package is widely preferred Parameter @ 10V GS @ 10V GS 1 Parameter AP50T10GI-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET BV D DSS R DS(ON TO-220CFM(I) S for ...
Page 2
... AP50T10GI-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...
Page 3
... D V =10V G 2.0 1.6 1.2 0.8 0.4 -50 10 Fig 4. Normalized On-Resistance v.s. Junction Temperature 2 I =250uA D 1.6 1 0.8 0.4 0 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP50T10GI-HF 10V o C 7.0V 6. Drain-to-Source Voltage ( 100 150 Junction Temperature ( 100 150 o T ,Junction Temperature ( ...
Page 4
... AP50T10GI- =16A D V =80V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 Operation in this area limited by R DS(ON = Single Pulse 0.1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...