AP9587GH-HF Advanced Power Electronics Corp., AP9587GH-HF Datasheet

AP9587GH-HF

Manufacturer Part Number
AP9587GH-HF
Description
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP9587GH-HF

Vds
-80V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
300
Rds(on) / Max(m?) Vgs@4.5v
400
Qg (nc)
6
Qgs (nc)
1.5
Qgd (nc)
3.3
Id(a)
-6.1
Pd(w)
20.8
Configuration
Single P
Package
TO-252
▼ Simple Drive Requirement
▼ Lower Gate Charge
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
V
V
I
I
I
P
P
T
T
Rthj-c
Rthj-a
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
Advanced Power MOSFETs from APEC provide the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-252 package is widely preferred for all commercial-industrial surface
mount applications and suited for low voltage applications such as DC/DC
converters. The through-hole version (AP9587GJ) is available for low-profile
applications.
D
D
DM
STG
J
DS
GS
D
D
@T
@T
@T
@T
C
C
Symbol
Symbol
C
A
=25℃
=100℃
=25℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
3
GS
GS
@ 10V
@ 10V
G
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
Halogen-Free Product
3
-55 to 150
-55 to 150
Rating
BV
R
I
D
20.8
+20
-6.1
-3.9
-80
-24
AP9587GH/J-HF
DS(ON)
2
DSS
Value
62.5
110
G
6
G
D
D
S
S
TO-252(H)
TO-251(J)
300mΩ
201110192
-6.1A
-80V
Units
Units
℃/W
℃/W
℃/W
W
W
V
V
A
A
A
1

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AP9587GH-HF Summary of contents

Page 1

... Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET G Parameter @ 10V GS @ 10V Parameter AP9587GH/J-HF Halogen-Free Product D BV -80V DSS R 300mΩ DS(ON) I -6. TO-252(H) ...

Page 2

... AP9587GH/J-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

... 10V G 1.6 1.2 0.8 0 -50 Fig 4. Normalized On-Resistance 2 -250uA D 1 0.5 0.0 1 1.2 -50 Fig 6. Gate Threshold Voltage v.s. AP9587GH/J-HF -10V o = 150 . . Drain-to-Source Voltage ( 100 Junction Temperature ( C) j v.s. Junction Temperature 0 50 ...

Page 4

... AP9587GH/J- - -64V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Operation in this area limited by R DS(ON = Single Pulse 0.1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area - =25 ...

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