AP9998GS-HF Advanced Power Electronics Corp., AP9998GS-HF Datasheet
AP9998GS-HF
Specifications of AP9998GS-HF
Related parts for AP9998GS-HF
AP9998GS-HF Summary of contents
Page 1
... Symbol Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET G Parameter @ 10V GS @ 10V GS 1 Parameter AP9998GS-HF Halogen-Free Product BV 100V D DSS R 25mΩ DS(ON) I 44A TO-263(S) S ...
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... AP9998GS-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...
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... D V =10V G 2.4 2.0 1.6 1.2 0.8 0.4 -50 150 o C) Fig 4. Normalized On-Resistance 1.8 I =250uA D 1 0.6 0.0 -50 1 1.2 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9998GS-HF 10V o C 9.0V 8.0V 7.0V V =6. Drain-to-Source Voltage ( 100 Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 Junction Temperature ( ...
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... AP9998GS- =80V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 Operation in this area limited by R DS(ON = Single Pulse 0.1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area 100 ...